UPD70F3713GC-8BS-A Renesas Electronics America, UPD70F3713GC-8BS-A Datasheet - Page 623
UPD70F3713GC-8BS-A
Manufacturer Part Number
UPD70F3713GC-8BS-A
Description
MCU 32BIT V850ES/LX2 64-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Ix2r
Datasheet
1.UPD70F3713GC-8BS-A.pdf
(674 pages)
Specifications of UPD70F3713GC-8BS-A
Core Processor
RISC
Core Size
32-Bit
Speed
20MHz
Connectivity
CSI, UART/USART
Peripherals
LVD, PWM, WDT
Number Of I /o
39
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
3.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UPD70F3713GC-8BS-A
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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18.4.5 Communication commands
signals sent from the dedicated flash memory programmer to the V850ES/IE2 are called “commands”. The response
signals sent from the V850ES/IE2 to the dedicated flash memory programmer are called “response commands”.
issued from the dedicated flash memory programmer, and the V850ES/IE2 performs the processing corresponding to
the commands.
Blank check
Erase
Write
Verify
System setting,
control
Classification
The V850ES/IE2 communicates with the dedicated flash memory programmer by means of commands. The
The following shows the commands for flash memory control in the V850ES/IE2. All of these commands are
Block blank check
command
Chip erase command
Block erase command
Program command
Verify command
Checksum command
Silicon signature
command
Security setting
command
Command Name
memory programmer
Dedicated flash
Table 18-7. Flash Memory Control Commands
Figure 18-9. Communication Commands
CSIB0
CHAPTER 18 FLASH MEMORY
√
√
√
√
√
√
√
√
User’s Manual U17716EJ2V0UD
Response command
CSIB0 + HS
Support
Command
√
√
√
√
√
√
√
√
UARTA0
√
√
√
√
√
√
√
√
V850ES/IE2
Checks if the contents of the memory in the
specified block have been correctly erased.
Erases the contents of the entire memory.
Erases the contents of the memory of the
specified block.
Writes the specified address range, and
executes a contents verify check.
Compares the contents of memory in the
specified address range with data
transferred from the flash memory
programmer.
Reads the checksum in the specified
address range.
Reads silicon signature information.
Disables the chip erase command, block
erase command, program command and
read command, and disables rewriting to the
boot area.
Function
621
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