HD64F2319VTE25 Renesas Electronics America, HD64F2319VTE25 Datasheet - Page 1024

• Manufacturer Part Number: HD64F2319VTE25
• Description: IC H8S MCU FLASH 512K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2319VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Appendix B Internal I/O Registers
RAMER—RAM Emulation Register
Note: * In the H8S/2314 F-ZTAT, this cannot be used and must not be accessed.
Rev.7.00 Feb. 14, 2007 page 990 of 1108
REJ09B0089-0700
Bit
Initial value
Read/Write
:
:
:
RAM Select, Flash Memory Area Select
RAMS
0
1
⎯
⎯
7
0
RAM2
×
0
1
⎯
⎯
6
0
RAM1
×
0
1
0
1
RAM0
⎯
⎯
5
0
×
0
1
0
1
0
1
0
1
H'FFDC00 to H'FFEBFF
H'000000 to H'000FFF
H'001000 to H'001FFF
H'002000 to H'002FFF
H'003000 to H'003FFF
H'004000 to H'004FFF
H'005000 to H'005FFF
H'006000 to H'006FFF
H'007000 to H'007FFF
⎯
⎯
4
0
RAM Area
RAMS
R/W
3
0
(Valid only in F-ZTAT versions * )
H'FEDB
RAM2
R/W
2
0
RAM area, 4 kbytes
EB0 (4 kbytes)
EB1 (4 kbytes)
EB2 (4 kbytes)
EB3 (4 kbytes)
EB4 (4 kbytes)
EB5 (4 kbytes)
EB6 (4 kbytes)
EB7 (4 kbytes)
RAM1
Block Name
R/W
1
0
Flash Memory
×: Don't care
RAM0
R/W
0
0