HD64F2319VTE25 Renesas Electronics America, HD64F2319VTE25 Datasheet - Page 652

IC H8S MCU FLASH 512K 100-QFP

HD64F2319VTE25

Manufacturer Part Number
HD64F2319VTE25
Description
IC H8S MCU FLASH 512K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of HD64F2319VTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F2319VTE25
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 17 ROM
17.11.6 Auto-Erase Mode
• Auto-erase mode supports only total memory erasing.
• Do not perform a command write during auto-erasing.
• Confirm normal end of auto-erasing by checking I/O
• Status polling I/O
Rev.7.00 Feb. 14, 2007 page 618 of 1108
REJ09B0089-0700
I/O
be used for this purpose (the I/O
operation).
as the next command write has not been performed, reading is possible by enabling CE and
OE.
A
5
18
to I/O
FWE
to A
I/O
I/O
WE
OE
CE
0
7
6
0
t
pns
Figure 17.26 Auto-Program Mode Timing Waveforms
t
ces
6
t
f
and I/O
t
ds
t
wep
H'40
7
pin information is retained until the next command write. As long
t
ceh
t
r
t
dh
7
t
nxtc
status polling pin is used to identify the end of an auto-erase
Address stable
t
as
1 byte to 128 bytes
t
ah
Data transfer
6
. Alternatively, status read mode can also
t
wsts
t
write
t
spa
H'00
t
Programming operation
end identification signal
Programming normal
end identification signal
pnh
t
nxtc

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