HD64F2319VTE25 Renesas Electronics America, HD64F2319VTE25 Datasheet - Page 873

IC H8S MCU FLASH 512K 100-QFP

HD64F2319VTE25

Manufacturer Part Number
HD64F2319VTE25
Description
IC H8S MCU FLASH 512K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of HD64F2319VTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F2319VTE25
Manufacturer:
Renesas Electronics America
Quantity:
10 000
20.1.5
Table 20.9 D/A Conversion Characteristics
Condition A: V
Condition B: V
Item
Resolution
Conversion
time
Absolute
accuracy
D/A Conversion Characteristics
0 V, φ = 2 MHz to 20 MHz, T
T
0 V, φ = 2 MHz to 25 MHz, T
T
a
a
CC
CC
Min
8
= –40°C to 85°C (wide-range specifications)
= –40°C to 85°C (wide-range specifications)
= 2.7 V to 3.6 V, AV
= 3.0 V to 3.6 V, AV
Condition A
Typ
8
±2.0
Max
8
10
±3.0
±2.0
CC
CC
= 2.7 V to 3.6 V, V
= 3.0 V to 3.6 V, V
a
a
= –20°C to 75°C (regular specifications),
= –20°C to 75°C (regular specifications),
Min
8
Condition B
Typ
8
±2.0
Rev.7.00 Feb. 14, 2007 page 839 of 1108
Section 20 Electrical Characteristics
ref
ref
Max
8
10
±3.0
±2.0
= 2.7 V to AV
= 3.0 V to AV
Unit
Bits
μs
LSB
LSB
CC
CC
REJ09B0089-0700
, V
, V
Test
Conditions
20-pF capacitive
load
2-MΩ resistive
load
4-MΩ resistive
load
SS
SS
= AV
= AV
SS
SS
=
=

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