HD64F2319VTE25 Renesas Electronics America, HD64F2319VTE25 Datasheet - Page 803

IC H8S MCU FLASH 512K 100-QFP

HD64F2319VTE25

Manufacturer Part Number
HD64F2319VTE25
Description
IC H8S MCU FLASH 512K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of HD64F2319VTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F2319VTE25
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Command Error
A command error will occur when a command is undefined, the order of commands is incorrect,
or a command is unacceptable. Issuing a clock-mode selection command before a device selection
or an inquiry command after the transition to programming/erasing state command, are examples.
Error
Response
• Error response, H'80, (1 byte): Command error
• Command, H'xx, (1 byte): Received command
Command Order
The order for commands in the inquiry selection state is shown below.
(1) A supported device inquiry (H'20) should be made to inquire about the supported devices.
(2) The device should be selected from among those described by the returned information and set
(3) A clock-mode inquiry (H'21) should be made to inquire about the supported clock modes.
(4) The clock mode should be selected from among those described by the returned information
(5) After selection of the device and clock mode, inquiries for other required information should
(6) A new bit rate should be selected with the new bit-rate selection (H'3F) command, according to
(7) After selection of the device and clock mode, the information of the user boot MAT and user
(8) After making inquiries and selecting a new bit rate, issue the transition to programming/erasing
Programming/Erasing State
A programming selection command makes the boot program select the programming method, an
n-byte programming command makes it program the memory with data, and an erasing selection
command and block erasing command make it erase the block. The programming/erasing
commands are listed below.
with a device-selection (H'10) command.
and set.
be made, such as the multiplication-ratio inquiry (H'22) or operating frequency inquiry (H'23).
the returned information on multiplication ratios and operating frequencies.
MAT should be made to inquire about the user boot MATs information inquiry (H'24), user
MATs information inquiry (H'25), erased block information inquiry (H'26), programming unit
inquiry (H'27).
state (H'40) command. The boot program will then enter the programming/erasing state.
H'80
H'xx
Rev.7.00 Feb. 14, 2007 page 769 of 1108
REJ09B0089-0700
Section 17 ROM

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