HD64F2319VTE25 Renesas Electronics America, HD64F2319VTE25 Datasheet - Page 647

• Manufacturer Part Number: HD64F2319VTE25
• Description: IC H8S MCU FLASH 512K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2319VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

17.11.4 Memory Read Mode
• After the end of an auto-program, auto-erase, or status read operation, the command wait state
• Command writes can be performed in memory read mode, just as in the command wait state.
• Once memory read mode has been entered, consecutive reads can be performed.
• After power-on, memory read mode is entered.
Table 17.16 AC Characteristics in Memory Read Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
is entered. To read memory contents, a transition must be made to memory read mode by
means of a command write before the read is executed.
A
Figure 17.22 Memory Read Mode Timing Waveforms after Command Write
Note: Data is latched at the rising edge of WE.
18
to A
Data
WE
OE
CE
0
CC
= 3.3 V ±0.3 V, V
t
ces
t
Command write
f
Symbol
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
r
f
SS
t
wep
t
ds
H'00
= 0 V, T
t
dh
t
t
ceh
r
a
= 25°C ±5°C
Min
20
0
0
50
50
70
—
—
t
nxtc
Rev.7.00 Feb. 14, 2007 page 613 of 1108
Max
—
—
—
—
—
—
30
30
Memory read mode
Address stable
Data
REJ09B0089-0700
Unit
μs
ns
ns
ns
ns
ns
ns
ns
Section 17 ROM