HD64F2319VTE25 Renesas Electronics America, HD64F2319VTE25 Datasheet - Page 661

• Manufacturer Part Number: HD64F2319VTE25
• Description: IC H8S MCU FLASH 512K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2319VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Notes: 1. Except when switching modes, the level of the mode pins (MD2 to MD0) must be fixed until
φ
V
FWE
MD2 to MD0
RES
SWE bit
CC
Period during which flash memory access is prohibited
(x: Wait time after setting SWE bit)
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations
prohibited)
2. See section 20.3.6, Flash Memory Characteristics.
3. Mode programming setup time t
power-off by pulling the pins up or down.
*1
Figure 17.31 Power-On/Off Timing (User Program Mode)
t
OSC1
t
MDS
SWE set
*3
*2
Wait time: x
MDS
(min) = 200 ns
Programming/
erasing
possible
Rev.7.00 Feb. 14, 2007 page 627 of 1108
SWE cleared
Wait time: 100 μs
Min 0 μs
REJ09B0089-0700
Section 17 ROM