HD64F2319VTE25 Renesas Electronics America, HD64F2319VTE25 Datasheet - Page 630

• Manufacturer Part Number: HD64F2319VTE25
• Description: IC H8S MCU FLASH 512K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2319VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 17 ROM
The flash memory itself cannot be read while the SWE bit is set to 1 to perform programming or
erasing, so the control program that performs programming and erasing should be run in on-chip
RAM or external memory. When the program is located in external memory, an instruction for
programming the flash memory and the following instruction should be located in on-chip RAM.
Figure 17.14 shows the procedure for executing the program/erase control program when
transferred to on-chip RAM.
Rev.7.00 Feb. 14, 2007 page 596 of 1108
REJ09B0089-0700
Notes: Do not apply a constant high level to the FWE pin. Apply a high level to the FWE pin
only when the flash memory is programmed or erased. Also, while a high level is
applied to the FWE pin, the watchdog timer should be activated to prevent
overprogramming or overerasing due to program runaway, etc.
* For further information on FWE application and disconnection, see section 17.12,
Flash Memory Programming and Erasing Precautions.
Figure 17.14 User Program Mode Execution Procedure
Write the FWE assessment program and
transfer program (and the program/erase
control program if necessary) beforehand
Branch to flash memory application
program (flash memory rewriting)
Branch to program/erase control
Transfer program/erase control
Execute program/erase control
MD2, MD1, MD0 = 110, 111
program in RAM area
program to RAM
FWE = high*
Clear FWE*
Reset-start
program