HD64F2319VTE25 Renesas Electronics America, HD64F2319VTE25 Datasheet - Page 750

IC H8S MCU FLASH 512K 100-QFP

HD64F2319VTE25

Manufacturer Part Number
HD64F2319VTE25
Description
IC H8S MCU FLASH 512K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of HD64F2319VTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F2319VTE25
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 17 ROM
Bit 4—Flash Key Register Error Detect (FK): Returns the check result of FKEY value before
start of the erasing processing.
Bit 4
FK
0
1
Bit 3—Erase Block Select Error Detect (EB): Returns the check result whether the specified
erase-block number is in the block range of the user MAT.
Bit 3
EB
0
1
Bits 2 and 1—Reserved: Return 0.
Bit 0—Success/Fail (SF): Indicates whether the erasing processing is ended normally or not.
Bit 0
SF
0
1
Rev.7.00 Feb. 14, 2007 page 716 of 1108
REJ09B0089-0700
Description
FKEY setting is normal (FKEY = H'5A)
FKEY setting is error (FKEY = value other than H'5A)
Description
Setting of erase-block number is normal
Setting of erase-block number is abnormal
Description
Erasure is ended normally (no error)
Erasure is ended abnormally (error occurs)

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