HD64F2319VTE25 Renesas Electronics America, HD64F2319VTE25 Datasheet - Page 1079

• Manufacturer Part Number: HD64F2319VTE25
• Description: IC H8S MCU FLASH 512K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2319VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

EBR1—Erase Block Register 1
EBR2—Erase Block Register 2
Bit
EBR1
Initial value
Read/Write
Bit
EBR2
Initial value
Read/Write
Notes: 1. Valid in the H8S/2319 F-ZTAT, H8S/2318 F-ZTAT, H8S/2315 F-ZTAT,
2. Valid in the H8S/2319 F-ZTAT, H8S/2315 F-ZTAT, and H8S/2314 F-ZTAT.
3. Valid in the H8S/2319 F-ZTAT. In other products, write 0 to these bits.
and H8S/2314 F-ZTAT. In other products, write 0 to these bits.
In other products, write 0 to these bits.
:
:
:
:
:
:
(Valid only in the H8S/2319 F-ZTAT, H8S/2318 F-ZTAT, H8S/2317 F-ZTAT,
EB15
R/W
R/W
EB7
7
0
7
0
*3
*3
EB14
R/W
EB6
R/W
6
0
6
0
*3
*3
EB13
R/W
EB5
R/W
5
0
5
0
*2
*2
EB12
R/W
R/W
EB4
4
0
4
0
H8S/2315 F-ZTAT, and H8S/2314 F-ZTAT)
*2
*2
Rev.7.00 Feb. 14, 2007 page 1045 of 1108
EB11
R/W
EB3
R/W
3
0
3
0
H'FFCA
H'FFCB
*1
*1
Appendix B Internal I/O Registers
EB10
R/W
EB2
R/W
2
0
2
0
*1
*1
EB1
R/W
EB9
R/W
REJ09B0089-0700
1
0
1
0
Flash Memory
Flash Memory
R/W
R/W
EB0
EB8
0
0
0
0