HD64F2319VTE25 Renesas Electronics America, HD64F2319VTE25 Datasheet - Page 634

• Manufacturer Part Number: HD64F2319VTE25
• Description: IC H8S MCU FLASH 512K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2319VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 17 ROM
17.7.3
Flash memory erasing should be performed block by block following the procedure shown in the
erase/erase-verify flowchart (single-block erase) shown in figure 17.16.
For the wait times (x, y, z, α, ß, γ, ε, η, θ) after bits are set or cleared in flash memory control
register 1 (FLMCR1) and the maximum number of programming operations (N), see section
20.3.6, Flash Memory Characteristics.
To perform data or program erasure, make a 1 bit setting for the flash memory area to be erased in
erase block register 1 or 2 (EBR1 or EBR2) at least (x) μs after setting the SWE bit to 1 in flash
memory control register 1 (FLMCR1). Next, the watchdog timer is set to prevent overerasing in
the event of program runaway, etc. Set a value greater than (y + z + α + ß) ms as the WDT
overflow period. After this, preparation for erase mode (erase setup) is carried out by setting the
ESU bit in FLMCR1, and after the elapse of (y) μs or more, the operating mode is switched to
erase mode by setting the E bit in FLMCR1. The time during which the E bit is set is the flash
memory erase time. Ensure that the erase time does not exceed (z) ms.
Note: With flash memory erasing, prewriting (setting all data in the memory to be erased to 0) is
17.7.4
In erase-verify mode, data is read after memory has been erased to check whether it has been
correctly erased.
After the elapse of the erase time, erase mode is exited (the E bit in FLMCR1 is cleared to 0, then
the ESU bit in FLMCR1 is cleared to 0 at least (α) μs later), the watchdog timer is cleared after
the elapse of (β) μs or more, and the operating mode is switched to erase-verify mode by setting
the EV bit in FLMCR1. Before reading in erase-verify mode, a dummy write of H'FF data should
be made to the addresses to be read. The dummy write should be executed after the elapse of (γ)
μs or more. When the flash memory is read in this state (verify data is read in 16-bit units), the
data at the latched address is read. Wait at least (ε) μs after the dummy write before performing
this read operation. If the read data has been erased (all 1), a dummy write is performed to the next
address, and erase-verify is performed. If the read data has not been erased, set erase mode again,
and repeat the erase/erase-verify sequence in the same way. However, ensure that the erase/erase-
verify sequence is not repeated more than (N) times. When verification is completed, exit erase-
verify mode, and wait for at least (η) μs. If erasure has been completed on all the erase blocks,
clear the SWE bit in FLMCR1 to 0 and wait for at least (θ) μs. If there are any unerased blocks,
make a 1 bit setting for the flash memory area to be erased, and repeat the erase/erase-verify
sequence in the same way.
Rev.7.00 Feb. 14, 2007 page 600 of 1108
REJ09B0089-0700
not necessary before starting the erase procedure.
Erase Mode
Erase-Verify Mode