AT89LP52-20MU Atmel, AT89LP52-20MU Datasheet - Page 92

• Manufacturer Part Number: AT89LP52-20MU
• Description: IC MCU 8051 8K FLASH SPI 44VQFN
• Manufacturer: Atmel
• Series: 89LPr

Specifications of AT89LP52-20MU

• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: EBI/EMI, I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 36
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 2.4 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-VFQFN Exposed Pad
• Processor Series: AT89x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: Serial
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 36
• Number Of Timers: 3
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Details

18. Electrical Characteristics
18.1
18.2
T
Notes:
92
Operating Temperature ................................... -40°C to +85°C
Storage Temperature ..................................... -65°C to +150°C
Voltage on Any Pin with Respect to Ground......-0.7V to +5.5V
Maximum Operating Voltage ............................................ 5.5V
Total DC Output Current ........................................... 150.0 mA
A
Symbol
V
V
V
V
V
I
I
I
R
C
I
IL
TL
LI
CC
OL
OH
OH1
IL
IH
RST
IO
= -40°C to 85°C, V
Absolute Maximum Ratings*
DC Characteristics
1. Under steady state (non-transient) conditions, I
2. Minimum V
3. All characteristics contained in this datasheet are based on simulation and characterization of other microcontrollers manu-
AT89LP51/52 - Preliminary
Maximum I
Maximum total I
If I
than the listed test conditions.
factured in the same process technology. These values are preliminary values representing design targets, and will be
updated after characterization of actual silicon.
OL
Parameter
Input Low-voltage
Input High-voltage
Output Low-voltage
Output High-voltage
With Weak Pull-ups Enabled
Output High-voltage
With Strong Pull-ups Enabled
Logic 0 Input Current
Logic 1 to 0 Transition Current
Input Leakage Current
Reset Pull-up Resistor
Pin Capacitance
Power Supply Current
(Fast Mode)
Power Supply Current
(Compatibility Mode)
Power-down Mode
exceeds the test condition, V
OL
DD
DD
per port pin: 10 mA
for Power-down is 2V.
= 2.4V to 5.5V (unless otherwise noted)
OL
for all output pins: 100 mA
(2)
(1)
OL
may exceed the related specification. Pins are not guaranteed to sink current greater
Condition
I
I
I
I
I
I
V
V
0 < V
Test Freq. = 1 MHz, T
Active Mode, 12 MHz, V
Idle Mode, 12 MHz, V
Active Mode, 12 MHz, V
Idle Mode, 12 MHz, V
V
V
OL
OH
OH
OH
OH
OH
IN
IN
DD
DD
= 10 mA, V
= -80 µA, V
= -30 µA
= -12 µA
= -10 mA, T
= -5 mA, T
= 0.45V
= 2V, V
= 5.5V
= 3V
IN
< V
OL
DD
DD
must be externally limited as follows:
= 5V ± 10%
A
DD
DD
A
= 85°C
= 85°C
= 2.4V, T
= 3V ± 10%
*NOTICE:
A
DD
DD
= 25°C
DD
DD
= 5.5V
= 5.5V
A
= 5.5V
= 5.5V
= 85°C
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
0.2 V
0.75 V
0.75 V
0.9 V
0.9 V
Min
-0.5
2.4
DD
50
+ 0.9
DD
DD
DD
DD
0.2 V
V
DD
Max
-750
150
±10
0.5
-50
10
DD
7
3
5
3
5
2
+ 0.5
3709B–MICRO–12/10
- 0.1
Units
mA
mA
mA
mA
µA
µA
µA
pF
µA
µA
kΩ
V
V
V
V
V
V