MD2433-D8G-V3Q18-X-P SanDisk, MD2433-D8G-V3Q18-X-P Datasheet - Page 27

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MD2433-D8G-V3Q18-X-P

Manufacturer Part Number
MD2433-D8G-V3Q18-X-P
Description
IC MDOC H1 8GB 115-FBGA
Manufacturer
SanDisk
Datasheet

Specifications of MD2433-D8G-V3Q18-X-P

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
8G (1G x 8)
Speed
64ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-30°C ~ 85°C
Package / Case
115-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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4.5.2
The TrueFFS driver is integrated into all major OSs, including Symbian, Palm OS, Windows
Mobile 5.0, Windows CE, Linux (various kernels), Nucleus, and others. Please contact your
assigned FAE at the regional msystems office for the latest driver version.
4.5.3 TrueFFS Software Development Kit (SDK)
The basic TrueFFS Software Development Kit (SDK) developer guide provides the source code for
the TrueFFS driver. It can be used in an OS-less environment or when special customization of the
driver is required for proprietary OSs.
When using mDOC H1 as the boot replacement device, TrueFFS SDK also incorporates in its
source code the boot software that is required for this configuration (this package is also available
separately). Please refer to the mDOC Boot Software Development Kit (BDK) developer guide for
further information on using this software package.
Note: mDOC H1 is supported by TrueFFS 6.3 and above.
4.5.4
TrueFFS accesses the flash memory within mDOC H1 through an 8KB window in the CPU
memory space. TrueFFS provides block device API by using standard file system calls, identical to
those used by a mechanical hard disk, to enable reading from and writing to any sector on mDOC
H1. This makes mDOC H1 compatible with any file system and file system utilities, such as
diagnostic tools and applications.
4.5.5
Since NAND flash is an imperfect storage media, it can contain bad blocks that cannot be used for
storage. TrueFFS automatically detects and maps out bad blocks upon system initialization,
ensuring that they are not used for storage. This management process is completely transparent to
the user, who is unaware of the existence and location of bad blocks, while remaining confident of
the integrity of data stored.
4.5.6
Flash memory can be erased a limited number of times. This number is called the erase cycle limit,
or write endurance limit, and is defined by the flash array vendor. The erase cycle limit applies to
each individual erase block in the flash device.
In a typical application, and especially if a file system is used, specific pages are constantly updated
(e.g., the page/s that contain the FAT, registry, etc.). Without any special handling, these pages
would wear out more rapidly than other pages, reducing the lifetime of the entire flash.
To overcome this inherent deficiency, TrueFFS uses msystems’ patented wear-leveling algorithm.
This wear-leveling algorithm ensures that consecutive writes of a specific sector are not written
physically to the same page in the flash. This spreads flash media usage evenly across all pages,
thereby maximizing flash lifetime.
Dynamic Wear-Leveling
TrueFFS uses statistical allocation to perform dynamic wear-leveling on newly written data. This
minimizes the number of erase cycles per block. Because a block erase is the most time-consuming
27
Built-In Operating System Support
File Management
Bad-Block Management
Wear-Leveling
Data Sheet, Rev. 1.1
mDOC H1 4Gb (512MByte) and 8Gb (1GByte)
95-DT-1104-01

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