MD2433-D8G-V3Q18-X-P SanDisk, MD2433-D8G-V3Q18-X-P Datasheet - Page 60

• Manufacturer Part Number: MD2433-D8G-V3Q18-X-P
• Description: IC MDOC H1 8GB 115-FBGA
• Manufacturer: SanDisk

Specifications of MD2433-D8G-V3Q18-X-P

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Speed: 64ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 115-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes: 1. Specified from the first positive crossing of VCC/VCCQ above 0.5V to the final positive
60
t
t
t
REC(VCC-RSTIN)
P(RSTIN-BUSY1)
HO(BUSY-EOC)
t
t
t
P(VCC-BUSY0)
SU(D-BUSY1)
t
RISE(VCCQ)
t
RISE(VCC)
t
W(RSTIN#)
Symbol
P(BUSY0)
2. Relevant parameters refer to the case were host whishes to apply a read/write cycle
3. If the assertion of RSTIN# occurs during a flash erase cycle, this time could be extended
4. VCC indicates both VCC and VCCQ.
CE#, OE#, WE#
D (Read cycle)
crossing above the minimum VCC/VCCQ operating voltage (typically 2.7V or 3.0V).
before BUSY# goes to ‘1’. (can be done up to Tsu(D-Busy) before de-assertion of
BUSY#.
by up to 2ms.
VCCQ = 1.65 or 2.7V
1
VCC = 2.7V
1
2
BUSY#
RSTIN#
2
3
4
VCC
VCC rise time
VCCQ rise time
VCC > minimum operating voltage to
RSTIN#
RSTIN# asserted pulse width
RSTIN#
RSTIN#
BUSY#
Data valid to BUSY#
VCC stable to BUSY#
Table 14: Power-Up and Reset Timing Parameters
T
to BUSY#
to BUSY#
to end of cycle
P
(VCC-BUSY0)
T
Description
REC
(VCC-RSTIN)
Figure 20: Reset Timing
T
Data Sheet, Rev. 1.1
P
(VCC-BUSY1)
T
T
SU
P
(RSTIN-BUSY1)
(D-BUSY1)
T
HO
Min
100
60
0
0
(BUSY-EOC)
mDOC H1 4Gb (512MByte) and 8Gb (1GByte)
Typical
380
1000
Max
T
18
18
50
50
P
(BUSY0)
T
W
(RSTIN)
Units
ms
ms
nS
nS
nS
µS
nS
nS
nS
95-DT-1104-01