MD2433-D8G-V3Q18-X-P SanDisk, MD2433-D8G-V3Q18-X-P Datasheet - Page 28

• Manufacturer Part Number: MD2433-D8G-V3Q18-X-P
• Description: IC MDOC H1 8GB 115-FBGA
• Manufacturer: SanDisk

Specifications of MD2433-D8G-V3Q18-X-P

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Speed: 64ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 115-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

operation, dynamic wear-leveling has a major impact on overall performance. This impact cannot
be noticed during the first write to flash (since there is no need to erase blocks beforehand), but it is
more and more noticeable as the flash media becomes full.
Static Wear-Leveling
Areas on the flash media may contain static files, characterized by blocks of data that remain
unchanged for very long periods of time, or even for the whole device lifetime. If wear-leveling
were only applied on newly written pages, static areas would never be recycled. This limited
application of wear-leveling would lower life expectancy significantly in cases where flash memory
contains large static areas. To overcome this problem, TrueFFS forces data transfer in static areas as
well as in dynamic areas, thereby applying wear-leveling to the entire media.
4.5.7 Power Failure Management
TrueFFS uses algorithms based on “erase after write” instead of "erase before write" to ensure data
integrity during normal operation and in the event of a power failure. Used areas are reclaimed for
erasing and writing the flash management information into them only after an operation is
complete. This procedure serves as a check on data integrity.
The “erase after write” algorithm is also used to update and store mapping information on the flash
memory. This keeps the mapping information coherent even during power failures. The only
mapping information held in RAM is a table pointing to the location of the actual mapping
information. This table is reconstructed during power-up or after reset from the information stored
in the flash memory.
To prevent data from being lost or corrupted, TrueFFS uses the following mechanisms:
•
•
4.5.8 Error Detection/Correction
TrueFFS implements a unique NAND-tailored Error Correction Code (ECC) algorithm to ensure
data reliability. Refer to Section 2.7 for further information on the EDC/ECC mechanism.
4.5.9
In addition to standard storage device functionality, the TrueFFS driver provides extended
functionality. This functionality goes beyond simple data storage capabilities to include features
such as: formatting the media, read/write protection, boot partition(s) access, flash de-fragmentation
and other options. This unique functionality is available in all TrueFFS-based drivers through the
standard I/O control command of the native file system.
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When writing, copying, or erasing the flash device, the data format remains valid at all
intermediate stages. Previous data is never erased until the operation has been completed and
the new data has been verified.
A data sector cannot exist in a partially written state. The operation is either successfully
completed, in which case the new sector contents are valid, or the operation has not yet been
completed or has failed, in which case the old sector contents remain valid.
Special Features Through I/O Control (IOCTL) Mechanism
Data Sheet, Rev. 1.1
mDOC H1 4Gb (512MByte) and 8Gb (1GByte)
95-DT-1104-01