MD2433-D8G-V3Q18-X-P SanDisk, MD2433-D8G-V3Q18-X-P Datasheet - Page 51

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MD2433-D8G-V3Q18-X-P

Manufacturer Part Number
MD2433-D8G-V3Q18-X-P
Description
IC MDOC H1 8GB 115-FBGA
Manufacturer
SanDisk
Datasheet

Specifications of MD2433-D8G-V3Q18-X-P

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
8G (1G x 8)
Speed
64ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-30°C ~ 85°C
Package / Case
115-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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8.2.4 AC Operating Conditions
Timing specifications are based on the conditions defined below.
Notes: 1. Test conditions for PCI buffers are in accordance with the PCI Local Bus Specification,
51
Symbol
I
V
V
V
I
I
I
I
Ambient temperature (TA)
Core supply voltage (VCC)
Input pulse levels
Input rise and fall times
Input timing levels
Output timing levels
Output load
LK
CC
ccq
CCS
CCQS
OH
OL
HYS
leakage current
High-level output voltage
Low-level output voltage
Hysteresis
Active supply current
Active VCCQ supply
current
Standby supply current
VCC balls
Standby supply current
VCCQ balls
revision 2.2.
1
Parameter
Parameter
Table 9: AC Characteristics
V
V
I
I
ST signals, VCCQ =
2.5
ST signals, VCCQ =
2.7
ST signals, VCCQ =
3.0
Cycle Time = 109 ns
Cycle Time = 109 ns
Deep Power-Down
mode
Deep Power-Down
mode
OH
OL
IN
IN
= 8 mA
Data Sheet, Rev. 1.1
= -8 mA
= VSS or VCCQ
= VSS ~ VCCQ
Conditions
VCCQ = 1.65-1.95V
-30°C to +85°C
2.7V to 3.6V
0V to VCCQ
VCCQ/2
VCCQ/2
1V/ns
30 pF
VCCQ-
0.6
0.4
0.26
0.30
0.4
Min
mDOC H1 4Gb (512MByte) and 8Gb (1GByte)
VCCQ-
0.6
0.4
43
1
22
3
Typ
VCCQ = 2.5-3.6V
-30°C to +85°C
68
±10
±20
VCCQ-0.6
0.4
6
110
10
2.7V to 3.6V
0V to VCCQ
VCCQ/2
VCCQ/2
Max
130 pF
1V/ns
95-DT-1104-01
µA
µA
V
V
V
V
V
mA
mA
µA
µA
Unit

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