LCMXO2-2000HC-4FTG256C Lattice, LCMXO2-2000HC-4FTG256C Datasheet - Page 41

• Manufacturer Part Number: LCMXO2-2000HC-4FTG256C
• Description: FPGA - Field Programmable Gate Array 2112 LUTs 207 IO 3.3V 4 Spd
• Manufacturer: Lattice

Specifications of LCMXO2-2000HC-4FTG256C

• Rohs: yes
• Number Of Gates: 2 K
• Embedded Block Ram - Ebr: 74 Kbit
• Number Of I/os: 207
• Maximum Operating Frequency: 269 MHz
• Operating Supply Voltage: 1.14 V to 3.465 V, 2.375 V to 3.465 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: ftBGA-256
• Distributed Ram: 16 Kbit
• Minimum Operating Temperature: 0 C
• Operating Supply Current: 4.8 mA
• Factory Pack Quantity: 90
• User Flash Memory - Ufm: 80 Kbit

Power-On-Reset Voltage Levels
Programming/Erase Specifications
Hot Socketing Specifications
ESD Performance
Please refer to the
performance.
V
V
V
V
1. These POR trip points are only provided for guidance. Device operation is only characterized for power supply voltages specified under rec-
2. For devices without voltage regulators V
3. Note that V
4. V
N
t
1. Maximum Flash memory reads are limited to 7.5E13 cycles over the lifetime of the product.
I
1. Insensitive to sequence of V
2. 0 < V
3. I
RETENTION
DK
PORUP
PORUPEXT
PORDNBG
PORDNSRAM
PROGCYC
ommended operating conditions.
lated from the V
12.0mV below V
DK
PORUPEXT
Symbol
Symbol
is additive to I
CC
Symbol
< V
PORUP
is for HC devices only. In these devices a separate POR circuit monitors the external V
CC
(MAX), 0 < V
CC
Power-On-Reset ramp up trip point (band gap based circuit
monitoring V
Power-On-Reset ramp up trip point (band gap based circuit
monitoring external V
Power-On-Reset ramp down trip point (band gap based circuit
monitoring V
Power-On-Reset ramp down trip point (SRAM based circuit
monitoring V
PORUP
Input or I/O leakage Current
PU
(min.) and V
supply voltage.
, I
MachXO2 Product Family Qualification Summary
PD
(min.).
Flash Programming cycles per t
Flash functional programming cycles
Data retention at 100°C junction temperature
Data retention at 85°C junction temperature
or I
CC
CCIO
BH
Parameter
CCINT
CCINT
CCINT
PORDNBG
.
and V
< V
)
)
CCIO
and V
CCIO
CCINT
CC
(max.) are in different process corners. For any given process corner V
. However, assumes monotonic rise/fall rates for V
(MAX).
power supply)
CCIO
Parameter
is the same as the V
)
Parameter
1, 2, 3
0 < V
1, 2, 3, 4
RETENTION
IN
Condition
< V
3-2
CC
IH
supply voltage. For devices with voltage regulators, V
(MAX)
for complete qualification data, including ESD
DC and Switching Characteristics
Min.
0.9
1.5
—
—
CC
+/-1000
Min.
MachXO2 Family Data Sheet
Max.
10
20
—
—
and V
CC
power supply.
CCIO
Typ.
0.6
—
—
—
.
100,000
10,000
Max.
PORDNBG
—
—
1
Max.
1.06
0.93
2.1
—
(max.) is always
Units
CCINT
µA
Cycles
Units
Years
Units
is regu-
V
V
V
V