MC9S12C128MFAE Freescale Semiconductor, MC9S12C128MFAE Datasheet - Page 650
![IC MCU 128K FLASH 25MHZ 48-LQFP](/photos/12/20/122066/mc9s12c128mfae_sml.jpg)
MC9S12C128MFAE
Manufacturer Part Number
MC9S12C128MFAE
Description
IC MCU 128K FLASH 25MHZ 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Specifications of MC9S12C128MFAE
Core Processor
HCS12
Core Size
16-Bit
Speed
25MHz
Connectivity
CAN, EBI/EMI, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
31
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.35 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
48-LQFP
Processor Series
S12C
Core
HCS12
Data Bus Width
16 bit
Data Ram Size
4 KB
Interface Type
CAN/SCI/SPI
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
31
Number Of Timers
8
Operating Supply Voltage
3.3 V to 5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
M68EVB912C32EE
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 10-bit
Package
48LQFP
Family Name
HCS12
Maximum Speed
25 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S12C128MFAE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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Appendix A Electrical Characteristics
A.1.6
All ESD testing is in conformity with CDF-AEC-Q100 Stress test qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model.
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
650
Human Body
Machine
Latch-up
Num
1
2
3
4
5
Model
C
C
C
C
C
C
ESD Protection and Latch-up Immunity
Human Body Model (HBM)
Machine Model (MM)
Charge Device Model (CDM)
Latch-up Current at 125°C
Latch-up Current at 27°C
Series Resistance
Storage Capacitance
Number of Pulse per pin
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Table A-3. ESD and Latch-Up Protection Characteristics
Table A-2. ESD and Latch-up Test Conditions
Rating
MC9S12C-Family / MC9S12GC-Family
Description
Rev 01.24
Negative
Negative
Positive
Positive
Negative
Negative
Positive
Positive
Symbol
V
V
V
I
I
HBM
CDM
LAT
LAT
MM
Symbol
R1
R1
—
—
—
—
—
—
C
C
2000
+100
–100
+200
–200
Min
200
500
Freescale Semiconductor
Value
1500
–2.5
100
200
7.5
3
3
0
3
3
Max
—
—
—
—
—
—
—
Ohm
Ohm
Unit
Unit
pF
pF
mA
mA
V
V
V
V
V
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