ML610Q412P-NNNTB03A7 Rohm Semiconductor, ML610Q412P-NNNTB03A7 Datasheet - Page 343

• Manufacturer Part Number: ML610Q412P-NNNTB03A7
• Description: MCU 8BIT 16K FLASH 120-TQFP
• Manufacturer: Rohm Semiconductor

Specifications of ML610Q412P-NNNTB03A7

• Core Processor: nX-U8/100
• Core Size: 8-Bit
• Speed: 625kHz
• Connectivity: I²C, SSP, UART/USART
• Peripherals: LCD, POR, PWM, WDT
• Number Of I /o: 14
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 1.1 V ~ 3.6 V
• Data Converters: A/D 2x12b, 2x24b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

27.2.2
Address: 0F0D0H
Access: R/W
Access size: 8 bits
Initial value: 00H
BLDCON0 is a special function register (SFR) to control the Battery Level Detector
[Description of Bits]
• LD3, LD2, LD1, LD0 (bits 3-0)
Initial value
BLDCON0
The LD3, LD2, LD1, and LD0 bits are used to select a threshold voltage (VCMP) of the Battery Level Detector. 16
levels of threshold voltages can be selected.
R/W
LD3
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
Battery Level Detector Control Register 0 (BLDCON0)
R/W

7
0
LD2
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
R/W

6
0
LD1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
R/W

5
0
LD0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
R/W

27 – 3
0
4
1.35 V ±2% (initial value)
1.40 V ±2%
1.45 V ±2%
1.50 V ±2%
1.60 V ±2%
1.70 V ±2%
1.80 V ±2%
1.90 V ±2%
2.00 V ±2%
2.10 V ±2%
2.20 V ±2%
2.30 V ±2%
2.40 V ±2%
2.50 V ±2%
2.70 V ±2%
2.90 V ±2%
ML610Q411/ML610Q412/ML610Q415 User’s Manual
R/W
LD3
3
0
Description
Chapter 27 Battery Level Detector
LD2
R/W
2
0
R/W
LD1
1
0
R/W
LD0
0
0