ML610Q412P-NNNTB03A7 Rohm Semiconductor, ML610Q412P-NNNTB03A7 Datasheet - Page 353

• Manufacturer Part Number: ML610Q412P-NNNTB03A7
• Description: MCU 8BIT 16K FLASH 120-TQFP
• Manufacturer: Rohm Semiconductor

Specifications of ML610Q412P-NNNTB03A7

• Core Processor: nX-U8/100
• Core Size: 8-Bit
• Speed: 625kHz
• Connectivity: I²C, SSP, UART/USART
• Peripherals: LCD, POR, PWM, WDT
• Number Of I /o: 14
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 1.1 V ~ 3.6 V
• Data Converters: A/D 2x12b, 2x24b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

29.3 Flash Memory Rewrite Function
Flash memory erase/write can be performed with the the memory mounted on board by using the commands from the
on-chip debug emulator (uEASE). For more details on the on-chip debug emulator, see “uEASE User’s Manual”.
Table 29-2 shows the Flash memory rewrite functions.
Table 29-3 shows the conditions and specifications of Flash memory rewrite.
Note:
When performing Flash memory rewrite (erase, write), a voltage within the range from 3.0V to 3.6 V needs to be
applied to the power supply voltage V
Chip erase
1-word write
Random read
Rewrite count
Operating temperature
Operating voltage
Chip-erase time
Block-erase time
1-word (16 bits) write
Overall-word (32K × 16 bits) write
Table 29-3 Specifications of Flash Memory Rewrite
Parameter
Function
Table 29-2 Flash Memory Rewrite Functions
DD
.
V
V
V
PP
DD
DDL
29 – 2
Erase of 8 Kwords (overall area)
Write of 1 word (2 bytes)
Read of input address
80
0°C to 40°C
8 V (Typ.) (Supplied from uEASE)
3.0V to 3.6 V
2.7 V (Typ.) (Supplied from uEASE)
77 ms (Typ.), 100 ms (Max.)
41 µs (Typ.), 64 µs (Max.)
Approx. 0.34s (Typ.), Approx. 0.53s (Max.)
77 ms (Typ.), 100 ms (Max.)
ML610Q411/ML610Q412/ML610Q415 User’s Manual
Specifications
Outline
Chapter 29 On-Chip Debug Function