ML610Q412P-NNNTB03A7 Rohm Semiconductor, ML610Q412P-NNNTB03A7 Datasheet - Page 361

• Manufacturer Part Number: ML610Q412P-NNNTB03A7
• Description: MCU 8BIT 16K FLASH 120-TQFP
• Manufacturer: Rohm Semiconductor

Specifications of ML610Q412P-NNNTB03A7

• Core Processor: nX-U8/100
• Core Size: 8-Bit
• Speed: 625kHz
• Connectivity: I²C, SSP, UART/USART
• Peripherals: LCD, POR, PWM, WDT
• Number Of I /o: 14
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 1.1 V ~ 3.6 V
• Data Converters: A/D 2x12b, 2x24b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

OPERATING CONDITIONS OF FLASH ROM
DC CHARACTERISTICS (1/5)
*1
RESET
Operating temperature
Operating voltage
Write cycles
Data retention
500kHz RC oscillation
frequency
Low-speed crystal
oscillation start time*
500kHz RC oscillation start
time
Low-speed oscillation stop
detect time
Reset pulse width
Reset noise elimination
pulse width
Power-on reset activation
power rise time
*
*
*
: Those voltages must be supplied to V
1
2
3
V
: When low-speed crystal oscillation stops for a duration more than the low-speed oscillation stop detect time, the
: Use 32.768KHz Crystal Oscillator C-001R (Epson Toyocom) with capacitance C
: Recommended operating temperature (Ta = −40 to +85°C for P version, Ta = −20 to +70°C for non-P version)
(V
PP
system is reset to shift to system reset mode.
DD
RESET_N
pin has an internal pulldown resister.
VDD
= 1.1 to 3.6V, AV
Parameter
*1
Parameter
2
0.1xV
DD
DD
= 2.2 to 3.6V, V
Symbol
0.9xV
P
T
P
T
T
T
T
f
STOP
NRST
POR
RC
RST
XTL
POR
RC
DD
Symbol
V
T
V
V
C
Y
DDL
V
OP
DD
DR
PP
EP
to 3.6V
DD
VIL1
SS
DDL
= AV
= 1.3
pin and V
RESET_N pin reset
Power on reset
Condition
SS
= 0V, Ta = −20 to +70°C, Ta = −40 to +85°C for P version, unless
⎯
⎯
⎯
⎯
⎯
⎯
Ta = 25°C
C – 2
P
VIL1
ML610Q411/ML610Q412/ML610Q415 User’s Manual
PP
RST
At write/erase
At write/erase
At write/erase
At write/erase
*
pin when programming and eraseing Flash ROM.
3
Condition
⎯
⎯
−10%
−25%
Min.
Typ.
Typ.
200
0.2
*1
*1
*1
⎯
⎯
⎯
⎯
Appendix C Electrical Characteristics
Rating
Typ.
500
500
0.3
50
⎯
⎯
⎯
3
GL
/C
DL
＝0pF.
+10%
+25%
2.75 to 3.6
2.5 to 2.75
Max.
Typ.
Typ.
500
7.7 to 8.3
0.3
0 to +40
20
10
⎯
2
Range
otherwise specified) (1/5)
80
10
Unit
kHz
kHz
ms
ms
(V
μs
μs
s
SS
= AV
Measuring
circuit
SS
cycles
years
Unit
1
°C
= 0V)
V