MT47H64M16HR-3 IT:H Micron Technology Inc, MT47H64M16HR-3 IT:H Datasheet - Page 106

• Manufacturer Part Number: MT47H64M16HR-3 IT:H
• Description: DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M16HR-3 IT:H

• Density: 1 Gb
• Maximum Clock Rate: 667 MHz
• Package: 84FBGA
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 0.45 ns
• Operating Temperature: -40 to 85 °C
• Organization: 64Mx16
• Address Bus: 16b
• Access Time (max): 450ps
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 135mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 57: Write Burst
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
Notes:
DQS, DQS#
DQS, DQS#
DQS, DQS#
Command
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
1. Subsequent rising DQS signals must align to the clock within
2. DI b = data-in for column b.
3. Three subsequent elements of data-in are applied in the programmed order following
4. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
Address
DI b.
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
WL ± t DQSS
WL - t DQSS
WL + t DQSS
NOP
T1
106
DI
b
NOP
T2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DI
b
DI
b
Transitioning Data
T2n
1Gb: x4, x8, x16 DDR2 SDRAM
t DQSS 5
NOP
T3
5
t DQSS 5
T3n
© 2004 Micron Technology, Inc. All rights reserved.
t
NOP
DQSS.
T4
Don’t Care
WRITE