MT47H64M16HR-3 IT:H Micron Technology Inc, MT47H64M16HR-3 IT:H Datasheet - Page 92

• Manufacturer Part Number: MT47H64M16HR-3 IT:H
• Description: DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M16HR-3 IT:H

• Density: 1 Gb
• Maximum Clock Rate: 667 MHz
• Package: 84FBGA
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 0.45 ns
• Operating Temperature: -40 to 85 °C
• Organization: 64Mx16
• Address Bus: 16b
• Access Time (max): 450ps
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 135mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 44: Multibank Activate Restriction
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
Bank address
Command
Address
CK#
CK
Bank a
ACT
Row
T0
Note:
t RRD (MIN)
READ
Bank a
Col
T1
1. DDR2-533 (-37E, x4 or x8),
t
FAW (MIN) = 37.5ns.
Bank b
Row
ACT
T2
READ
Bank b
Col
T3
Bank c
Row
ACT
T4
92
t
CK = 3.75ns, BL = 4, AL = 3, CL = 4,
t FAW (MIN)
READ
Bank c
Col
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Bank d
Row
ACT
T6
1Gb: x4, x8, x16 DDR2 SDRAM
READ
Bank d
Col
T7
NOP
T8
© 2004 Micron Technology, Inc. All rights reserved.
t
RRD (MIN) = 7.5ns,
NOP
T9
ACTIVATE
Don’t Care
Bank e
Row
T10
ACT