MT47H64M16HR-3 IT:H Micron Technology Inc, MT47H64M16HR-3 IT:H Datasheet - Page 65

• Manufacturer Part Number: MT47H64M16HR-3 IT:H
• Description: DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M16HR-3 IT:H

• Density: 1 Gb
• Maximum Clock Rate: 667 MHz
• Package: 84FBGA
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 0.45 ns
• Operating Temperature: -40 to 85 °C
• Organization: 64Mx16
• Address Bus: 16b
• Access Time (max): 450ps
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 135mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Table 33: Single-Ended DQS Slew Rate Derating Values Using
Reference points indicated in bold; Derating values are to be used with base
Table 34: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at V
Reference points indicated in bold
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
DQ (V/ns)
DQ (V/ns)
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
t
130
–28 –135 –28 –135 –28 –135 –28 –135 –28 –135 –13 –140
–78 –198 –78 –198 –78 –198 –78 –198 –78 –198 –63 –203 –53 –206 –43 –210 –33 –213
DS
97
30
25
17
–7
2.0 V/ns
t
330
330
330
347
367
391
426
472
522
5
2.0 V/ns
DS
t
–10
–24
–41
–64
–93
DH
53
32
t
291
290
290
290
290
290
290
290
289
DH
t
130
DS
97
30
25
17
–7
t
330
330
330
347
367
391
426
472
522
1.8 V/ns
5
1.8 V/ns
DS
t
–10
–24
–41
–64
–93
t
DH
53
32
291
290
290
290
290
290
290
290
289
DH
DDR2-667. It is not advised to operate DDR2-800 and DDR2-1066 devices with single-
ended DQS; however, Table 33 would be used with the base values.
t
130
t
330
330
330
347
367
391
426
472
522
97
30
25
17
DS
–7
1.6 V/ns
1.6 V/ns
DS
5
DQS Single-Ended Slew Rate Derated (at V
DQS Single-Ended Slew Rate Derated (at V
t
–10
–24
–41
–64
–93
t
291
290
290
290
290
290
290
290
289
DH
53
32
DH
t
130
t
330
330
330
347
367
391
426
472
522
DS
97
30
25
17
–7
1.4 V/ns
1.4 V/ns
DS
5
t
t
–10
–24
–41
–64
–93
291
290
290
290
290
290
290
290
289
DH
53
32
DH
65
t
130
t
330
330
330
347
367
391
426
472
522
1.2 V/ns
DS
97
30
25
17
–7
DS
1.2 V/ns
5
t
t
290
–10
291
290
290
290
290
290
290
289
–24
–41
–64
–93
DH
DH
53
32
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
345
145
112
t
345
345
362
382
406
441
487
537
t
45
DS
40
32
20
1.0 V/ns
1.0 V/ns
DS
8
DS
t
DS
1Gb: x4, x8, x16 DDR2 SDRAM
b
b
t
- and
–15
–29
–46
–69
–98
and
t
285
DH
48
27
REF
286
285
285
285
285
285
285
284
DH
) at DDR2-667
Input Slew Rate Derating
t
t
t
DH
155
122
DH
50
42
30
18
DS
55
–3
t
0.8 V/ns
355
355
355
372
392
416
451
497
547
0.8 V/ns
DS
REF
REF
b-
b
-specified values
)
–102
–143
)
t
–18
–32
–49
–72
DH
45
24
t
282
282
282
282
282
281
282
282
281
DH
© 2004 Micron Technology, Inc. All rights reserved.
t
165
132
t
DS
65
60
52
40
28
365
365
365
382
402
426
461
507
557
0.6 V/ns
7
0.6 V/ns
DS
–105
–147
t
–22
–36
–53
–75
t
DH
279
278
278
278
278
278
278
278
41
20
DH
29
t
175
142
t
375
375
375
392
412
436
471
517
567
DS
75
70
61
50
38
17
0.4 V/ns
0.4 V/ns
DS
–108
–150
t
–25
–39
–56
–79
t
276
275
275
275
275
275
275
275
274
DH
38
17
DH