MT47H64M16HR-3 IT:H Micron Technology Inc, MT47H64M16HR-3 IT:H Datasheet - Page 85

• Manufacturer Part Number: MT47H64M16HR-3 IT:H
• Description: DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M16HR-3 IT:H

• Density: 1 Gb
• Maximum Clock Rate: 667 MHz
• Package: 84FBGA
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 0.45 ns
• Operating Temperature: -40 to 85 °C
• Organization: 64Mx16
• Address Bus: 16b
• Access Time (max): 450ps
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 135mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 38: READ Latency
Figure 39: WRITE Latency
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
DQS, DQS#
Command
DQS, DQS#
Command
CK#
DQ
CK
CK#
DQ
CK
ACTIVE n
ACTIVE n
T0
T0
Notes:
Notes:
READ n
T1
WRITE n
1. BL = 4.
2. Shown with nominal
3. RL = AL + CL = 5.
1. BL = 4.
2. CL = 3.
3. WL = AL + CL - 1 = 4.
t RCD (MIN)
T1
t RCD (MIN)
AL = 2
NOP
T2
AL = 2
NOP
T2
NOP
T3
WL = AL + CL - 1 = 4
t
AC,
RL = 5
NOP
T3
85
t
DQSCK, and
NOP
T4
CL = 3
CL - 1 = 2
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T4
t
DQSQ.
NOP
T5
Extended Mode Register (EMR)
1Gb: x4, x8, x16 DDR2 SDRAM
NOP
T5
DI
n
NOP
T6
Transitioning Data
DO
n + 1
n
DI
Transitioning Data
© 2004 Micron Technology, Inc. All rights reserved.
n + 1
DO
NOP
n + 2
T6
DI
NOP
T7
n + 2
DO
n + 3
DI
n + 3
DO
Don’t Care
Don’t Care
NOP
NOP
T7
T8