MT47H64M16HR-3 IT:H Micron Technology Inc, MT47H64M16HR-3 IT:H Datasheet - Page 86

• Manufacturer Part Number: MT47H64M16HR-3 IT:H
• Description: DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M16HR-3 IT:H

• Density: 1 Gb
• Maximum Clock Rate: 667 MHz
• Package: 84FBGA
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 0.45 ns
• Operating Temperature: -40 to 85 °C
• Organization: 64Mx16
• Address Bus: 16b
• Access Time (max): 450ps
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 135mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Extended Mode Register 2 (EMR2)
Figure 40: EMR2 Definition
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
Notes:
The extended mode register 2 (EMR2) controls functions beyond those controlled by
the mode register. Currently all bits in EMR2 are reserved, except for E7, which is used
in commercial or high-temperature operations, as shown in Figure 40. The EMR2 is pro-
grammed via the LM command and will retain the stored information until it is program-
med again or until the device loses power. Reprogramming the EMR will not alter the
contents of the memory array, provided it is performed correctly.
Bit E7 (A7) must be programmed as “1” to provide a faster refresh rate on IT and AT
devices if T
EMR2 must be loaded when all banks are idle and no bursts are in progress, and the
controller must wait the specified time
tion. Violating either of these requirements could result in an unspecified operation.
E15
0
0
1
1
1. E16 (BA2) is only applicable for densities ≥1Gb, reserved for future use, and must be pro-
2. Mode bits (En) with corresponding address balls (An) greater than E12 (A12) are re-
E14
BA2
16
0
0
1
0
1
grammed to “0.”
served for future use and must be programmed to “0.”
1
Extended mode register (EMR2)
Extended mode register (EMR3)
BA1
15
Extended mode register (EMR)
MRS
BA0
14
Mode register (MR)
Mode Register Set
C
0
An
n
exceeds 85°C.
2
12
0
A12 A11
0
11
0
10
A10
0
9
A9
0 SRT 0
8
A8
E7
0
1
7
A7 A6 A5 A4 A3
1X refresh rate (0°C to 85°C)
86
6
2X refresh rate (>85°C)
0
5
SRT Enable
0
4
0
3
0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
2
MRD before initiating any subsequent opera-
A2 A1 A0
Extended Mode Register 2 (EMR2)
0
1
0
0
1Gb: x4, x8, x16 DDR2 SDRAM
Extended mode
register (Ex)
Address bus
© 2004 Micron Technology, Inc. All rights reserved.