TE28F640J3D75 Intel, TE28F640J3D75 Datasheet - Page 6

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TE28F640J3D75

Manufacturer Part Number
TE28F640J3D75
Description
Manufacturer
Intel
Datasheet

Specifications of TE28F640J3D75

Cell Type
NOR
Density
64Mb
Access Time (max)
75ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3/3.3V
Sync/async
Asynchronous
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4Mword
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Not Compliant
1.0
1.1
1.2
Datasheet
6
AMIN:
AMAX:
Block:
Clear:
Program:
Set:
VPEN:
V
CUI:
OTP:
PLR:
PR:
PRD:
RFU:
PEN
:
Introduction
This document contains information pertaining to the Numonyx™ Embedded Flash
Memory (J3 v. D) device features, operation, and specifications.
The Numonyx™ Embedded Flash Memory J3 Version D (J3 v. D) provides improved
mainstream performance with enhanced security features, taking advantage of the
high quality and reliability of the NOR-based Intel* 0.13 µm ETOX™ VIII process
technology. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the
Numonyx™ Embedded Flash Memory (J3 v. D) device brings reliable, low-voltage
capability (3 V read, program, and erase) with high speed, low-power operation. The
Numonyx™ Embedded Flash Memory (J3 v. D) device takes advantage of the proven
manufacturing experience and is ideal for code and data applications where high
density and low cost are required, such as in networking, telecommunications, digital
set top boxes, audio recording, and digital imaging. Numonyx Flash Memory
components also deliver a new generation of forward-compatible software support. By
using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers
can take advantage of density upgrades and optimized write capabilities of future
Numonyx Flash Memory devices.
Nomenclature
Acronyms
All Densities
All Densities
32 Mbit
64 Mbit
128 Mbit
A group of flash cells that share common erase circuitry and erase simultaneously
Indicates a logic zero (0)
To write data to the flash array
Indicates a logic one (1)
Refers to a signal or package connection name
Refers to timing or voltage levels
Command User Interface
One Time Programmable
Protection Lock Register
Protection Register
Protection Register Data
Reserved for Future Use
AMIN = A0 for x8
AMIN = A1 for x16
AMAX = A21
AMAX = A22
AMAX = A23
Numonyx™ Embedded Flash Memory (J3 v. D)
November 2007
308551-05

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