TE28F640J3D75 Intel, TE28F640J3D75 Datasheet - Page 61

no-image

TE28F640J3D75

Manufacturer Part Number
TE28F640J3D75
Description
Manufacturer
Intel
Datasheet

Specifications of TE28F640J3D75

Cell Type
NOR
Density
64Mb
Access Time (max)
75ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3/3.3V
Sync/async
Asynchronous
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4Mword
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Not Compliant
Numonyx™ Embedded Flash Memory (J3 v. D)
13.5
Table 37: System Interface Information
13.6
Table 38: Device Geometry Definition
November 2007
308551-05
Offset
Offset
1Dh
1Bh
1Ch
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
2Ah
2Ch
2Dh
27h
28h
Length
Length
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
1
4
System Interface Information
The following device information can optimize system interface software.
Device Geometry Definition
This field provides critical details of the flash device geometry.
V
V
V
V
“n” such that typical single word program time-out = 2
“n” such that typical max. buffer write time-out = 2
“n” such that typical block erase time-out = 2
“n” such that typical full chip erase time-out = 2
“n” such that maximum word program time-out = 2
“n” such that maximum buffer write time-out = 2
“n” such that maximum block erase time-out = 2
“n” such that maximum chip erase time-out = 2
“n” such that device size = 2
Flash device interface:
“n” such that maximum number of bytes in write buffer = 2
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or more
contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
Erase Block Region 1 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
CC
CC
PP
PP
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
[programming] supply minimum program/erase voltage
[programming] supply maximum program/erase voltage
logic supply minimum program/erase voltage
logic supply maximum program/erase voltage
x8 async
28:00,29:00 28:01,29:00 28:02,29:00
Description
n
in number of bytes
Description
x16 async x8/x16 async
n
ms
n
n
n
n
times typical
ms
times typical
times typical
n
n
µs
times typical
n
µs
n
Add.
1B:
1C:
1D:
1E:
1F:
20:
21:
22:
23:
24:
25:
26:
Code See Table Below
27:
28:
2A:
2B:
2C:
2D:
30:
29:
2E:
2F:
Code
Hex
--27
--36
--00
--00
--06
--07
--0A
--00
--02
--03
--02
--00
--02
--05
--00
--01
--00
Datasheet
1024 µs
128 µs
256 µs
Value
2.7 V
3.6 V
0.0 V
0.0 V
64 µs
1 s
4 s
NA
NA
x16
x8/
32
1
61

Related parts for TE28F640J3D75