h8s-2635 Renesas Electronics Corporation., h8s-2635 Datasheet - Page 829

• Manufacturer Part Number: h8s-2635
• Description: Renesas 16-bit Single-chip Microcomputer H8s Family/h8s/2600 Series
• Manufacturer: Renesas Electronics Corporation.

21A.9.4
In erase-verify mode, data is read after memory has been erased to check whether it has been
correctly erased.
After the elapse of the fixed erase time, clear the E bit in FLMCR1, then wait for at least (t
before clearing the ESU bit to exit erase mode. After exiting erase mode, the watchdog timer
setting is also cleared. The operating mode is then switched to erase-verify mode by setting the EV
bit in FLMCR1. Before reading in erase-verify mode, a dummy write of H'FF data should be made
to the addresses to be read. The dummy write should be executed after the elapse of (t
more. When the flash memory is read in this state (verify data is read in 16-bit units), the data at
the latched address is read. Wait at least (t
read operation. If the read data has been erased (all 1), a dummy write is performed to the next
address, and erase-verify is performed. If the read data is unerased, set erase mode again, and
repeat the erase/erase-verify sequence as before. The maximum number of repetitions of the
erase/erase-verify sequence is indicated by the maximum erase count (N). When verification is
completed, exit erase-verify mode, and wait for at least (t
all the erase blocks, clear the SWE bit in FLMCR1, and leave a wait time of at least (t
If erasing multiple blocks, set a single bit in EBR1/EBR2 for the next block to be erased, and
repeat the erase/erase-verify sequence as before.
Erase-Verify Mode
sevr
) µs after the dummy write before performing this
Rev. 6.00 Feb 22, 2005 page 769 of 1484
cev
) µs. If erasure has been completed on
Section 21A ROM (H8S/2636 Group)
REJ09B0103-0600
sev
cswe
) µs or
) µs.
ce
) µs