h8s-2635 Renesas Electronics Corporation., h8s-2635 Datasheet - Page 851

• Manufacturer Part Number: h8s-2635
• Description: Renesas 16-bit Single-chip Microcomputer H8s Family/h8s/2600 Series
• Manufacturer: Renesas Electronics Corporation.

2. In a power-down state, FLMCR1, FLMCR2, EBR1, EBR2, RAMER, and FLPWCR cannot be
21A.15 Flash Memory Programming and Erasing Precautions
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
programmer mode are summarized below.
1. Use the specified voltages and timing for programming and erasing.
2. Powering on and off (see figures 21A-26 to 21A-28)
3. FWE application/disconnection (see figures 21A-26 to 21A-28)
read from or written to.
Applied voltages in excess of the rating can permanently damage the device. Use a PROM
programmer that supports the Renesas Technology microcomputer device type with 128-kbyte
on-chip flash memory.
Only use the specified socket adapter. Failure to observe these points may result in damage to
the device.
Do not apply a high level to the FWE pin until V
low before turning off V
When applying or disconnecting V
in the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a
power failure and subsequent recovery.
FWE application should be carried out when MCU operation is in a stable condition. If MCU
operation is not stable, fix the FWE pin low and set the protection state.
The following points must be observed concerning FWE application and disconnection to
prevent unintentional programming or erasing of flash memory:
• Apply FWE when the V
• In boot mode, apply and disconnect FWE during a reset.
• In user program mode, FWE can be switched between high and low level regardless of a
• Do not apply FWE if program runaway has occurred.
Apply FWE when oscillation has stabilized (after the elapse of the oscillation settling
time).
reset state.
FWE input can also be switched during execution of a program in flash memory.
CC
.
CC
voltage has stabilized within its rated voltage range.
CC
power, fix the FWE pin low and place the flash memory
CC
has stabilized. Also, drive the FWE pin
Rev. 6.00 Feb 22, 2005 page 791 of 1484
Section 21A ROM (H8S/2636 Group)
REJ09B0103-0600