MD8331-D2G-V3-X-P SanDisk, MD8331-D2G-V3-X-P Datasheet - Page 64

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MD8331-D2G-V3-X-P

Manufacturer Part Number
MD8331-D2G-V3-X-P
Description
IC MDOC G4 2GB 69-FBGA
Manufacturer
SanDisk
Datasheet

Specifications of MD8331-D2G-V3-X-P

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Speed
33ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
69-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
585-1149-2
MD8831-D2G-V3-X-P
MD8832-D2G-V3-X-P

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MD8331-D2G-V3-X-P
Manufacturer:
INTEL
Quantity:
480
Part Number:
MD8331-D2G-V3-X-P
Manufacturer:
M-SYSTEM
Quantity:
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Part Number:
MD8331-D2G-V3-X-P
Manufacturer:
SanDisk
Quantity:
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Part Number:
MD8331-D2G-V3-X-P/Y
Manufacturer:
SanDisk
Quantity:
10 000
10.
10.1 Environmental Specifications
10.1.1 Operating Temperature
Commercial temperature range:
Extended temperature range: -40°C to +85°C
10.1.2 Thermal Characteristics
10.1.3 Humidity
10% to 90% relative, non-condensing
10.2 Electrical Specifications
10.2.1 Absolute Maximum Ratings
1.
2.
3.
10.2.2 Capacitance
64
VCC
VCCQ
T
I
V
T
ESD: Charged Device Model
ESD: Human Body Model
Lead temperature
Symbol
IN
1SUPPLY
STG
IN
C
2
Permanent device damage may occur if absolute maximum ratings are exceeded. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
The voltage on any ball may undershoot to -2.0 V or overshoot to 6.6V for less than 20 ns.
When operating DiskOnChip G4 with separate power supplies for VCC and VCCQ, it is recommended to turn both supplies on and off
simultaneously. Providing power separately (either at power-on or power-off) can cause excessive power dissipation. Damage to the device
may result if this condition persists for more than 1 second.
IN
P
RODUCT
Symbol
Input capacitance (128MB/1Gb device)
S
PECIFICATIONS
Junction to Case (θ
Parameter
DC core supply voltage
DC I/O supply voltage
Maximum duration of applying
VCCQ without VCC, or VCC
without VCCQ
Input pin/ball current (25 °C)
Input pin/ball voltage
Storage temperature
ESD
ESD
Tlead (10 sec)
Table 6: Absolute Maximum Ratings
CDM
HBM
Table 5: Thermal Characteristics
Data Sheet (Preliminary) Rev. 0.3
Thermal Resistance (°C/W)
0°C to +70°C
Parameter
JC
Table 7: Capacitance
): 30
Junction to Ambient (θ
Conditions
V
IN
= 0V
-0.6 to VCCQ+0.3V, 4.6V max
DiskOnChip G4 128MB (1Gb)/256MB (2Gb) 1.8V
Min
JA
-0.6 to 4.6
-0.6 to 4.6
-55 to 150
): 85
-10 to 10
Rating1
1000
1000
2000
260
Typ
Max
10
92-DS-1105-00
Unit
msec
Unit
pF
mA
°C
°C
V
V
V
V
V

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