MD8331-D2G-V3-X-P SanDisk, MD8331-D2G-V3-X-P Datasheet - Page 65

• Manufacturer Part Number: MD8331-D2G-V3-X-P
• Description: IC MDOC G4 2GB 69-FBGA
• Manufacturer: SanDisk

Specifications of MD8331-D2G-V3-X-P

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Speed: 33ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 69-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 585-1149-2; MD8831-D2G-V3-X-P; MD8832-D2G-V3-X-P

10.2.3 DC Electrical Characteristics over Operating Range
See Table 8 for DC characteristics for VCCQ ranges 1.65-1.95V
65
Symbol
Capacitance is not 100% tested.
VCCQ
VCC
I
V
I
V
V
C
V
I
IOLK
I
CCS
ILK
CC
OH
OL
IH
OUT
IL
Core supply voltage
Input/Output supply voltage
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
Input leakage current
(128MB/1Gb device)
Input leakage current
(256MB/2Gb device)
Output leakage current
(128MB/1Gb device)
Output leakage current
(256MB/2Gb device)
Active supply current
Standby supply current,
(128MB/1Gb device)
Standby supply current,
(256MB/2Gb device)
Input capacitance (256MB/2Gb device)
Output capacitance (128MB/1Gb device)
Output capacitance (256MB/2Gb device)
Parameter
Table 8: DC Characteristics, VCC=VCCQ = 1.65-1.95V I/O
1
2,4
2
Data Sheet (Preliminary) Rev. 0.3
I
D[15:0] I
IRQ#, BUSY#, DMARQ# 4 mA
Read
Program
Erase
Cycle Time = 100 ns
RSTIN# = VSS or
DPD Mode
CE# = VCCQ,
All other inputs VSS or
VCCQ
Normal mode, CE# =
VCCQ, All other inputs 0V
or VCCQ
RSTIN# = VSS or
DPD Mode
CE# = VCCQ,
All other inputs VSS or
VCCQ
OH
= -100 µA
Conditions
OL
3
3
= 100 µA
,
,
V
O
= 0V
DiskOnChip G4 128MB (1Gb)/256MB (2Gb) 1.8V
VCCQ – 0.4
VCCQ – 0.1
1.65
1.65
Min
Typ
350
1.8
1.8
4.2
7.4
7.4
10
20
20
10
20
1000
Max
1.95
1.95
±10
±20
±10
±20
92-DS-1105-00
0.4
0.1
0.3
25
40
80
pF
pF
pF
Unit
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V