MCHC908MR8VFAE Freescale Semiconductor, MCHC908MR8VFAE Datasheet - Page 58

• Manufacturer Part Number: MCHC908MR8VFAE
• Description: IC MCU 8K FLASH 8MHZ PWM 32-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MCHC908MR8VFAE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 16
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 7x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 32-LQFP
• Processor Series: HC08MR
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 33
• Number Of Timers: 4
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, M68CBL05CE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

FLASH Memory
4.2.3 FLASH Page Erase Operation
Technical Data
58
NOTE:
PGM — Program Control Bit
Use this step-by-step procedure to erase a page (64 bytes) of FLASH
memory to read as logic 1:
While these operations must be performed in the order shown, other
unrelated operations may occur between the steps. Do not exceed t
maximum. See
10. After a time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH control
2. Read the FLASH block protect register.
3. Write to any FLASH address with any data within the page
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
set at the same time.
1 = Program operation selected
0 = Program operation unselected
register.
address range desired.
read mode again.
21.7 Memory
FLASH Memory
RCV
NVS
Erase
NVH
(typically 1 µs), the memory can be accessed in
(minimum of 10 µs).
(minimum of 5 µs).
(minimum of 1 ms).
Characteristics.
MC68HC908MR8 — Rev 4.1
Freescale Semiconductor
NVH