PIC18F6621-I/PT Microchip Technology Inc., PIC18F6621-I/PT Datasheet - Page 69

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PIC18F6621-I/PT

Manufacturer Part Number
PIC18F6621-I/PT
Description
64 PIN, 64 KB FLASH, 3840 RAM, 52 I/O
Manufacturer
Microchip Technology Inc.
Datasheet

Specifications of PIC18F6621-I/PT

A/d Inputs
12-Channel, 10-Bit
Comparators
2
Cpu Speed
10 MIPS
Eeprom Memory
1024 Bytes
Input Output
54
Interface
I2C/SPI/UART/USART
Memory Type
Flash
Number Of Bits
8
Package Type
64-pin TQFP
Programmable Memory
64K Bytes
Ram Size
3.8K Bytes
Speed
40 MHz
Timers
2-8-bit, 3-16-bit
Voltage, Range
2-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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5.5
The minimum programming block is 4 words or 8 bytes.
Word or byte programming is not supported.
Table writes are used internally to load the holding
registers needed to program the Flash memory. There
are 8 holding registers used by the table writes for
programming.
Since the Table Latch (TABLAT) is only a single byte,
the TBLWT instruction has to be executed 8 times for
each programming operation. All of the table write
operations will essentially be short writes because only
FIGURE 5-5:
5.5.1
The sequence of events for programming an internal
program memory location should be:
1.
2.
3.
4.
5.
6.
7.
 2005 Microchip Technology Inc.
TBLPTR = xxxxx0
Read 64 bytes into RAM.
Update data values in RAM as necessary.
Load Table Pointer register with address being
erased.
Do the row erase procedure.
Load Table Pointer register with address of first
byte being written.
Write the first 8 bytes into the holding registers
with auto-increment.
Set the EECON1 register for the write operation:
• set EEPGD bit to point to program memory;
• clear the CFGS bit to access program memory;
• set WREN to enable byte writes.
Writing to Flash Program Memory
FLASH PROGRAM MEMORY WRITE
SEQUENCE
Holding Register
8
TABLE WRITES TO FLASH PROGRAM MEMORY
TBLPTR = xxxxx1
Holding Register
PIC18F6525/6621/8525/8621
8
Program Memory
TBLPTR = xxxxx2
Write Register
TABLAT
the holding registers are written. At the end of updating
8 registers, the EECON1 register must be written to, to
start the programming operation with a long write.
The long write is necessary for programming the
internal Flash. Instruction execution is halted while in a
long write cycle. The long write will be terminated by
the internal programming timer.
The EEPROM on-chip timer controls the write time.
The write/erase voltages are generated by an on-chip
charge pump, rated to operate over the voltage range
of the device for byte or word operations.
8.
9.
10. Write AAh to EECON2.
11. Set the WR bit. This will begin the write cycle.
12. The CPU will stall for duration of the write (about
13. Re-enable interrupts.
14. Repeat steps 6-14 seven times to write 64 bytes.
15. Verify the memory (table read).
This procedure will require about 18 ms to update one
row of 64 bytes of memory. An example of the required
code is given in Example 5-3.
Holding Register
Note:
Disable interrupts.
Write 55h to EECON2.
2 ms using internal timer).
8
Before setting the WR bit, the Table
Pointer address needs to be within the
intended address range of the eight bytes
in the holding register.
TBLPTR = xxxxx7
Holding Register
DS39612B-page 67
8

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