PIC18F6621-I/PT Microchip Technology Inc., PIC18F6621-I/PT Datasheet - Page 84

• Manufacturer Part Number: PIC18F6621-I/PT
• Description: 64 PIN, 64 KB FLASH, 3840 RAM, 52 I/O
• Manufacturer: Microchip Technology Inc.

Specifications of PIC18F6621-I/PT

• A/d Inputs: 12-Channel, 10-Bit
• Comparators: 2
• Cpu Speed: 10 MIPS
• Eeprom Memory: 1024 Bytes
• Input Output: 54
• Interface: I2C/SPI/UART/USART
• Memory Type: Flash
• Number Of Bits: 8
• Package Type: 64-pin TQFP
• Programmable Memory: 64K Bytes
• Ram Size: 3.8K Bytes
• Speed: 40 MHz
• Timers: 2-8-bit, 3-16-bit
• Voltage, Range: 2-5.5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PIC18F6525/6621/8525/8621
7.5
Depending on the application, good programming
practice may dictate that the value written to the mem-
ory should be verified against the original value. This
should be used in applications where excessive writes
can stress bits near the specification limit.
7.6
There are conditions when the user may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been built-in. On power-up, the WREN bit is cleared.
Also, the Power-up Timer (72 ms duration) prevents
EEPROM write.
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch or software malfunction.
EXAMPLE 7-3:
DS39612B-page 82
Loop
Write Verify
Protection Against Spurious Write
CLRF
CLRF
BCF
BCF
BCF
BSF
BSF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BTFSC
BRA
INCFSZ EEADR, F
BRA
INCFSZ EEADRH, F
BRA
BCF
BSF
EEADR
EEADRH
EECON1, CFGS
EECON1, EEPGD
INTCON, GIE
EECON1, WREN
EECON1, RD
55h
EECON2
AAh
EECON2
EECON1, WR
EECON1, WR
$-2
Loop
Loop
EECON1, WREN
INTCON, GIE
DATA EEPROM REFRESH ROUTINE
; Start at address 0
;
; Set for memory
; Set for Data EEPROM
; Disable interrupts
; Enable writes
; Loop to refresh array
; Read current address
;
; Write 55h
;
; Write AAh
; Set WR bit to begin write
; Wait for write to complete
; Increment address
; Not zero, do it again
; Increment the high address
; Not zero, do it again
; Disable writes
; Enable interrupts
7.7
Data EEPROM memory has its own code-protect
mechanism. External read and write operations are
disabled if either of these mechanisms are enabled.
Refer to Section 24.0 “Special Features of the
CPU”, for additional information.
7.8
The data EEPROM is a high endurance, byte
addressable array that has been optimized for the
storage of frequently changing information (e.g.,
program variables or other data that are updated
often). Frequently changing values will typically be
updated more often than specification D124. If this is
not the case, an array refresh must be performed. For
this reason, variables that change infrequently (such as
constants, IDs, calibration, etc.) should be stored in
Flash program memory.
A simple data EEPROM refresh routine is shown in
Example 7-3.
Operation During Code-Protect
Using the Data EEPROM
 2005 Microchip Technology Inc.