STM8AF52AA

Manufacturer Part NumberSTM8AF52AA
DescriptionSTM8AF52 CAN Line
ManufacturerSTMicroelectronics
STM8AF52AA datasheet
 


Specifications of STM8AF52AA

Max Fcpu24 MHzProgram Memory32 to 128 Kbytes Flash program; data retention 20 years at 55 °C
Data Memoryup to 2 Kbytes true data EEPROM; endurance 300 kcyclesRam2 Kbytes to 6 Kbytes
Advanced Control Timer16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization  
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
Page 61
62
Page 62
63
Page 63
64
Page 64
65
Page 65
66
Page 66
67
Page 67
68
Page 68
69
Page 69
70
Page 70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
Page 67/106

Download datasheet (2Mb)Embed
PrevNext
STM8AF52/62xx, STM8AF51/61xx
Table 33.
HSE oscillator characteristics
Symbol
Parameter
R
Feedback resistor
F
(1)
C
/C
Recommended load capacitance
L1
L2
g
Oscillator trans conductance
m
(2)
t
Startup time
SU(HSE)
1. The oscillator needs two load capacitors, C
(C
* C
)/(C
+ C
). If C
= C
L1
L2
L1
L2
L1
2. This value is the startup time, measured from the moment it is enabled (by software) until a stabilized 24 MHz oscillation is
reached. It can vary with the crystal type that is used.
Figure 19. HSE oscillator circuit diagram
R
m
C
O
L
m
C
m
Resonator
HSE oscillator critical g
The crystal characteristics have to be checked with the following formula:
Equation 1
where g
can be calculated with the crystal parameters as follows:
mcrit
Equation 2
R
: Notional resistance (see crystal specification)
m
L
: Notional inductance (see crystal specification)
m
C
: Notional capacitance (see crystal specification)
m
Co: Shunt capacitance (see crystal specification)
C
= C
= C: Grounded external capacitance
L1
L2
Conditions
V
is
DD
stabilized
and C
, to act as load for the crystal. The total load capacitance (C
L1
L2
, C
= C
. Some oscillators have built-in load capacitors, C
L2
load
L1/2
C
L1
OSCIN
Resonator
OSCOUT
C
L2
formula
m
g
g
»
m
mcrit
f
(
×
Π
×
g
2
HSE
=
mcrit
Doc ID 14395 Rev 8
Electrical characteristics
Min
Typ
Max
220
20
5
2.8
and C
L1
L2
f
to core
HSE
R
F
g
m
Current control
2
2
)
×
(
)
R
2Co
C
+
m
Unit
pF
mA/V
ms
) is
Load
.
STM8A
67/106