STM8AF52AA

Manufacturer Part NumberSTM8AF52AA
DescriptionSTM8AF52 CAN Line
ManufacturerSTMicroelectronics
STM8AF52AA datasheet
 


Specifications of STM8AF52AA

Max Fcpu24 MHzProgram Memory32 to 128 Kbytes Flash program; data retention 20 years at 55 °C
Data Memoryup to 2 Kbytes true data EEPROM; endurance 300 kcyclesRam2 Kbytes to 6 Kbytes
Advanced Control Timer16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization  
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Page 70/106

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Electrical characteristics
10.3.5
Memory characteristics
Flash program memory/data EEPROM memory
General conditions: T
Table 36.
Flash program memory/data EEPROM memory
Symbol
Operating voltage
V
DD
(all modes, execution/write/erase)
V
Operating voltage (code execution)
DD
Standard programming time
(including erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
t
prog
Fast programming time for 1 block
(128 bytes)
t
Erase time for 1 block (128 bytes)
erase
1. Guaranteed by characterization, not tested in production.
Table 37.
Flash program memory
Symbol
T
Temperature for writing and erasing
WE
Flash program memory endurance
N
WE
(erase/write cycles)
t
Data retention time
RET
1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a
write/erase operation addresses a single byte.
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= -40 °C to 150 °C.
A
Parameter
Conditions
f
is 16 to 24 MHz
CPU
with 1 ws
f
is 0 to 16 MHz
CPU
with 0 ws
f
is 16 to 24 MHz
CPU
with 1 ws
f
is 0 to 16 MHz
CPU
with 0 ws
Parameter
Condition
T
(1)
T
T
Doc ID 14395 Rev 8
STM8AF52/62xx, STM8AF51/61xx
(1)
Min
Typ
Max
3.0
5.5
2.6
5.5
6
6.6
3
3.3
3
3.3
Min
Max
-40
150
= 25 °C
1000
A
= 25 °C
40
A
= 55 °C
20
A
Unit
V
ms
ms
Unit
°C
cycles
years