STM8AF52AA

Manufacturer Part NumberSTM8AF52AA
DescriptionSTM8AF52 CAN Line
ManufacturerSTMicroelectronics
STM8AF52AA datasheet
 


Specifications of STM8AF52AA

Max Fcpu24 MHzProgram Memory32 to 128 Kbytes Flash program; data retention 20 years at 55 °C
Data Memoryup to 2 Kbytes true data EEPROM; endurance 300 kcyclesRam2 Kbytes to 6 Kbytes
Advanced Control Timer16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization  
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Page 72/106

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Electrical characteristics
10.3.6
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
unused pins must be kept at a fixed voltage, using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
Table 39.
I/O static characteristics
Symbol
Parameter
V
Low-level input voltage
IL
V
High-level input voltage
IH
(1)
V
Hysteresis
hys
V
High-level output voltage
OH
V
Low-level output voltage
OL
R
Pull-up resistor
pu
Rise and fall time
t
, t
R
F
(10% - 90%)
Digital input pad leakage
I
lkg
current
Analog input pad leakage
I
lkg ana
current
Leakage current in
I
(2)
lkg(inj)
adjacent I/O
Total current on either
I
DDIO
V
or V
DDIO
SSIO
1. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.
2. Data based on characterization results, not tested in production.
72/106
and T
DD
Conditions
0.7 x V
Standard I/0, V
= 5 V,
DD
V
DD
I = 3 mA
Standard I/0, V
= 3 V,
DD
V
DD
I = 1.5 mA
High sink and true open
drain I/0, V
= 5 V
DD
I = 8 mA
Standard I/0, V
= 5 V
DD
I = 3 mA
Standard I/0, V
= 3 V
DD
I = 1.5 mA
V
= 5 V, V
= V
DD
IN
SS
Fast I/Os
Load = 50 pF
Standard and high sink I/Os
Load = 50 pF
V
V
V
SS
IN
DD
V
V
V
SS
IN
DD
-40 °C < T
< 125 °C
A
V
V
V
SS
IN
DD
-40 °C < T
< 150 °C
A
Injection current ±4 mA
Including injection currents
Doc ID 14395 Rev 8
STM8AF52/62xx, STM8AF51/61xx
unless otherwise specified. All
A
Min
Typ
Max
-0.3 V
0.3 x V
DD
V
+ 0.3 V
DD
DD
0.1 x
V
DD
- 0.5 V
- 0.4 V
0.5
0.6
0.4
35
50
65
(2)
20
(2)
125
±1
±250
±500
(2)
±1
60
Unit
V
ns
µA
nA
µA
mA