HD64F3337YCP16V Renesas Electronics America, HD64F3337YCP16V Datasheet - Page 442

MCU 3/5V 60K PB-FREE 84-PLCC

HD64F3337YCP16V

Manufacturer Part Number
HD64F3337YCP16V
Description
MCU 3/5V 60K PB-FREE 84-PLCC
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Datasheets

Specifications of HD64F3337YCP16V

Core Size
8-Bit
Program Memory Size
60KB (60K x 8)
Oscillator Type
Internal
Core Processor
H8/300
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Operating Temperature
-20°C ~ 75°C
Package / Case
84-PLCC
No. Of I/o's
74
Ram Memory Size
1KB
Cpu Speed
16MHz
No. Of Timers
6
No. Of Pwm Channels
2
Digital Ic Case Style
PLCC
Controller Family/series
H8/300
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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19.4.7
Prewrite-verify mode is a verify mode used when programming all bits to equalize their threshold
voltages before erasing them.
Program all flash memory to H'00 by writing H'00 using the prewrite algorithm shown in figure
19.10. H'00 should also be written when using RAM for flash memory emulation (when
prewriting a RAM area). (This also applies when using RAM to emulate flash memory erasing
with an emulator or other support tool.) After the necessary programming time has elapsed, exit
program mode (by clearing the P bit to 0) and select prewrite-verify mode (leave the P, E, PV, and
EV bits all cleared to 0). In prewrite-verify mode, a prewrite-verify voltage is applied to the
memory cells at the read address. If the flash memory is read in this state, the data at the read
address will be read. After selecting prewrite-verify mode, wait 4 s or more before reading.
Note: For a sample prewriting program, see the prewrite subroutine in the sample erasing
19.4.8
Flash memory can be protected from programming and erasing by software or hardware methods.
These two protection modes are described below.
Software Protection: Prevents transitions to program mode and erase mode even if the P or E bit
is set in the flash memory control register (FLMCR). Details are as follows.
Protection
Block
protect
Emulation
protect
Notes: *1 Three modes: program-verify, erase-verify, and prewrite-verify.
410
*2
program.
*2 Except in RAM areas overlapped onto flash memory.
*3 All blocks are erase-disabled. It is not possible to specify individual blocks.
Prewrite Verify Mode
Protect Modes
Description
Individual blocks can be protected from erasing
and programming by the erase block registers
(EBR1 and EBR2). If H'F0 is set in EBR1 and
H'00 in EBR2, all blocks are protected from
erasing and programming.
When the RAMS or RAM0 bit, but not both,
is set in the wait-state control register (WSCR),
all blocks are protected from programming and
erasing.
Program
Disabled
Disabled
Function
Erase
Disabled
Disabled
*3
Verify
Enabled
Enabled
*1

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