HD64F3337YCP16V Renesas Electronics America, HD64F3337YCP16V Datasheet - Page 522

• Manufacturer Part Number: HD64F3337YCP16V
• Description: MCU 3/5V 60K PB-FREE 84-PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16V

• Core Size: 8-Bit
• Program Memory Size: 60KB (60K x 8)
• Oscillator Type: Internal
• Core Processor: H8/300
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• No. Of I/o's: 74
• Ram Memory Size: 1KB
• Cpu Speed: 16MHz
• No. Of Timers: 6
• No. Of Pwm Channels: 2
• Digital Ic Case Style: PLCC
• Controller Family/series: H8/300
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

(7) Design a current margin into the programming voltage (V
V
Programming and erasing may become impossible outside this range.
(8) Ensure that peak overshoot does not exceed the rated value at the FV
Connect decoupling capacitors as close to the FV
Also connect decoupling capacitors to the MD
(9) Use the recommended algorithms for programming and erasing flash memory. These
algorithms are designed to program and erase without subjecting the device to voltage stress and
without sacrificing the reliability of programmed data.
Before setting the program (P) or erase (E) bit in the flash memory control register (FLMCR), set
the watchdog timer to ensure that the P or E bit does not remain set for more than the specified
time.
(10) For details on interrupt handling while flash memory is being programmed or erased,
see the notes on NMI interrupt handling in section 20.4.9, Interrupt Handling during Flash
Memory Programming and Erasing.
(11) Cautions on Accessing Flash Memory Control Registers
1. Flash memory control register access state in each operating mode
490
PP
The H8/3337YF has flash memory control registers located at addresses H'FF80 (FLMCR),
H'FF82 (EBR1), and H'FF83 (EBR2). These registers can only be accessed when 12 V is
applied to the flash memory program power supply pin, FV
Table 1 shows the area accessed for the above addresses in each mode, when 12 V is and is not
applied to FV
will not depart from 12.0 0.6 V (11.4 V to 12.6 V) during programming or erasing.
12 V
PP
Figure 20.21 V
.
1.0 F
PP
Power Supply Circuit Design (Example)
0.01 F
1
pin in the same way when boot mode is uesd.
PP
and MD
FV
1
pins as possible.
PP
PP
.
PP
) power supply. Ensure that
H8/3337YF
PP
and MD
1
pins.