CY8C3866AXI-040 Cypress Semiconductor Corp, CY8C3866AXI-040 Datasheet - Page 21

PSOC 3 TQFP

CY8C3866AXI-040

Manufacturer Part Number
CY8C3866AXI-040
Description
PSOC 3 TQFP
Manufacturer
Cypress Semiconductor Corp
Series
PSOC™ 3 CY8C38xxr
Datasheet

Specifications of CY8C3866AXI-040

Package / Case
*
Voltage - Supply (vcc/vdd)
1.71 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Speed
67MHz
Number Of I /o
62
Eeprom Size
2K x 8
Core Processor
8051
Program Memory Type
FLASH
Ram Size
8K x 8
Program Memory Size
64KB (64K x 8)
Data Converters
A/D 2x20b, D/A 4x8b
Oscillator Type
Internal
Peripherals
CapSense, DMA, LCD, POR, PWM, WDT
Connectivity
CAN, EBI/EMI, I²C, LIN, SPI, UART/USART, USB
Core Size
8-Bit
Processor Series
CY8C38
Core
8051
Data Bus Width
32 bit
Data Ram Size
8 KB
Interface Type
I2C, SPI, UART, USB
Maximum Clock Frequency
67 MHz
Number Of Programmable I/os
28 to 72
Number Of Timers
4
Operating Supply Voltage
0.5 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Controller Family/series
(8051) PSOC 3
No. Of I/o's
62
Eeprom Memory Size
2KB
Ram Memory Size
8KB
Cpu Speed
67MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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5. Memory
5.1 Static RAM
CY8C38 SRAM is used for temporary data storage. Up to 8 KB
of SRAM is provided and can be accessed by the 8051 or the
DMA controller. See
access of SRAM by the 8051 and the DMA controller is possible
if different 4-KB blocks are accessed.
5.2 Flash Program Memory
Flash memory in PSoC devices provides nonvolatile storage for
user firmware, user configuration data, bulk data storage, and
optional ECC data. The main flash memory area contains up to
64 KB of user program space.
Up to an additional 8 KB of flash space is available for ECC. If
ECC is not used this space can store device configuration data
and bulk user data. User code may not be run out of the ECC
flash memory section. ECC can correct one bit error and detect
two bit errors per 8 bytes of firmware memory; an interrupt can
be generated when an error is detected.
Flash is read in units of rows; each row is 9 bytes wide with 8
bytes of data and 1 byte of ECC data. When a row is read, the
data bytes are copied into an 8-byte instruction buffer. The CPU
fetches its instructions from this buffer, for improved CPU
performance.
Flash programming is performed through a special interface and
preempts code execution out of flash. The flash programming
interface performs flash erasing, programming and setting code
protection levels. Flash in-system serial programming (ISSP),
typically used for production programming, is possible through
both the SWD and JTAG interfaces. In-system programming,
typically used for bootloaders, is also possible using serial
interfaces such as I
communications protocol.
5.3 Flash Security
All PSoC devices include a flexible flash-protection model that
prevents access and visibility to on-chip flash memory. This
prevents duplication or reverse engineering of proprietary code.
Flash memory is organized in blocks, where each block contains
256 bytes of program or data and 32 bytes of ECC or
configuration data. A total of up to 256 blocks is provided on
64-KB flash devices.
The device offers the ability to assign one of four protection
levels to each row of flash.
available. Flash protection levels can only be changed by
performing a complete flash erase. The Full Protection and Field
Upgrade settings disable external access (through a debugging
tool such as PSoC Creator, for example). If your application
requires code update through a bootloader, then use the Field
Upgrade setting. Use the Unprotected setting only when no
Document Number: 001-11729 Rev. *R
2
C, USB, UART, and SPI, or any
Memory Map
Table 5-1
on page 24. Simultaneous
lists the protection modes
security is needed in your application. The PSoC device also
offers an advanced security feature called Device Security which
permanently disables all test, programming, and debug ports,
protecting your application from external access (see the
“Device Security”
about how to take full advantage of the security features in
PSoC, see the
Table 5-1. Flash Protection
Disclaimer
Note the following details of the flash code protection features on
Cypress devices.
Cypress products meet the specifications contained in their
particular Cypress data sheets. Cypress believes that its family
of products is one of the most secure families of its kind on the
market today, regardless of how they are used. There may be
methods, unknown to Cypress, that can breach the code
protection features. Any of these methods, to our knowledge,
would be dishonest and possibly illegal. Neither Cypress nor any
other semiconductor manufacturer can guarantee the security of
their code. Code protection does not mean that we are
guaranteeing the product as ‘unbreakable’. Cypress is willing to
work with the customer who is concerned about the integrity of
their code. Code protection is constantly evolving. We at Cypress
are committed to continuously improving the code protection
features of our products.
5.4 EEPROM
PSoC EEPROM memory is a byte-addressable nonvolatile
memory. The CY8C38 has up to 2 KB of EEPROM memory to
store user data. Reads from EEPROM are random access at the
byte level. Reads are done directly; writes are done by sending
write commands to an EEPROM programming interface. CPU
code execution can continue from flash during EEPROM writes.
EEPROM is erasable and writeable at the row level. The
EEPROM is divided into 128 rows of 16 bytes each. The CPU
can not execute out of EEPROM. There is no ECC hardware
associated with EEPROM. If ECC is required it must be handled
in firmware.
Unprotected
Factory
Upgrade
Field Upgrade Internal read and write
Full Protection Internal read
Protection
Setting
PSoC 3 TRM.
External read and write
+ internal read and write
External write + internal
read and write
section on page 62). For more information
PSoC
Allowed
®
3: CY8C38 Family
External read
External read and
write
External read and
write + internal write
Data Sheet
Not Allowed
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