RC28F256P30TFB Micron Technology Inc, RC28F256P30TFB Datasheet - Page 42

• Manufacturer Part Number: RC28F256P30TFB
• Manufacturer: Micron Technology Inc

Specifications of RC28F256P30TFB

• Cell Type: NOR
• Density: 256Mb
• Access Time (max): 100ns
• Interface Type: Parallel/Serial
• Boot Type: Top
• Address Bus: 24b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 16b
• Number Of Words: 16M
• Supply Current: 31mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / Rohs Status: Not Compliant

Table 16: LC and Frequency Support
Figure 14: Example Latency Count Setting using Code 3
11.2.3
Figure 15: End of Wordline Timing Diagram
Datasheet
42
A[MAX:0]
A[MAX:1]
D[15:0]
A [Max :1 ]
D Q[15 :0 ]
ADV#
C LK
CLK
CE#
Latency Count Settings
End of Word Line (EOWL) Considerations
End of Wordline (EOWL) WAIT states can result when the starting address of the burst
operation is not aligned to a 16-word boundary; that is, A[3:0] of start address does
not equal 0x0.
end of wordline WAIT state(s), which occur after the first 16-word boundary is reached.
The number of data words and the number of WAIT states is summarized in
“End of Wordline Data and WAIT state Comparison” on page
and P30-65nm devices.
A D V#
W A IT
5 (TSOP); 4 (Easy BGA)
OE#
5 (Easy BGA)
Address
Figure 15, “End of Wordline Timing Diagram” on page 42
Latency C ount
0
Code 3
1
High-Z
R103
Address
D ata
2
Frequency Support (MHz)
D ata
EOW L
≤ 40
≤ 52
3
43for both P30-130nm
D ata
t
Order Number: 320002-10
Data
Data
4
illustrates the
Table 17,
P30-65nm
Mar 2010