RC28F256P30TFB Micron Technology Inc, RC28F256P30TFB Datasheet - Page 57

• Manufacturer Part Number: RC28F256P30TFB
• Manufacturer: Micron Technology Inc

Specifications of RC28F256P30TFB

• Cell Type: NOR
• Density: 256Mb
• Access Time (max): 100ns
• Interface Type: Parallel/Serial
• Boot Type: Top
• Address Bus: 24b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 16b
• Number Of Words: 16M
• Supply Current: 31mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / Rohs Status: Not Compliant

P30-65nm
Figure 23: Asynchronous Page-Mode Read Timing
Note:
Figure 24: Synchronous Single-Word Array or Non-array Read Timing
1.
2.
Datasheet
57
Address [A]
Data [D/Q]
ADV# [V]
WAIT [T]
OE# [G]
A[Max:4] [A]
DATA [D/Q]
WAIT shown deasserted during asynchronous read mode (RCR.10=0, WAIT asserted low).
CLK [C]
CE# [E]
WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either
during or one data cycle before valid data.
This diagram illustrates the case in which an n-word burst is initiated to the flash memory array and it is terminated by
CE# deassertion after the first word in the burst.
WAIT [T]
OE# [G]
CE# [E]
A[3:0]
ADV#
R105
R105
R301
R303
R105
R105
R101
R104
R104
R101
R102
R6
R2
R3
R15
R306
R4
0
R106
R7
Q1
R2
R3
R4
R10
Valid Address
R108
1
Q2
R307
R106
R304
R10
2
R108
Q3
R10
R305
R312
R108
F
R9
R17
Q16
R8
R9
Order Number: 320002-10
R10
R8
R13
Mar 2010