RC28F256P30TFB Micron Technology Inc, RC28F256P30TFB Datasheet - Page 59

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RC28F256P30TFB

Manufacturer Part Number
RC28F256P30TFB
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of RC28F256P30TFB

Cell Type
NOR
Density
256Mb
Access Time (max)
100ns
Interface Type
Parallel/Serial
Boot Type
Top
Address Bus
24b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
EZBGA
Sync/async
Async/Sync
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
2V
Word Size
16b
Number Of Words
16M
Supply Current
31mA
Mounting
Surface Mount
Pin Count
64
Lead Free Status / Rohs Status
Not Compliant

Available stocks

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Quantity
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Part Number:
RC28F256P30TFB
Quantity:
4 694
P30-65nm
15.4
Table 28: AC Write Specifications
Datasheet
59
W1
W2
W3
W4
W5
W6
W7
W8
W9
W10
W11
W12
W13
W14
W16
Write to Asynchronous Read Specifications
W18
Write to Synchronous Read Specifications
W19
W20
W28
Write Specifications with Clock Active
W21
W22
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
Num
Write timing characteristics during erase suspend are the same as write-only operations.
A write operation can be terminated with either CE# or WE#.
Sampled, not 100% tested.
Write pulse width low (t
(whichever occurs first). Hence, t
Write pulse width high (t
(whichever occurs last). Hence, t
t
V
This specification is only applicable when transiting from a write cycle to an asynchronous read. See spec W19 and W20
for synchronous read.
When doing a Read Status operation following any command that alters the Status Register, W14 is 20 ns.
Add 10 ns if the write operation results in a RCR or block lock status change, for the subsequent read operation to
reflect this change.
These specs are required only when the device is in a synchronous mode and clock is active during address setup phase.
This specification must be complied with by customer’s writing timing. The result would be unpredictable if any violation
to this timing specification.
WHVH
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
PP
PHWL
ELWL
WLWH
DVWH
AVWH
WHEH
WHDX
WHAX
WHWL
VPWH
QVVL
QVBL
BHWH
WHGL
WHQV
WHAV
WHCH/L
WHVH
WHVL
VHWL
CHWL
Symbol
and WP# should be at a valid level until erase or program success is determined.
or t
AC Write Specifications
WHCH/L
RST# high recovery to WE# low
CE# setup to WE# low
WE# write pulse width low
Data setup to WE# high
Address setup to WE# high
CE# hold from WE# high
Data hold from WE# high
Address hold from WE# high
WE# pulse width high
V
V
WP# hold from Status read
WP# setup to WE# high
WE# high to OE# low
WE# high to read valid
WE# high to Address valid
WE# high to Clock valid
WE# high to ADV# high
WE# high to ADV# low
ADV# high to WE# low
Clock high to WE# low
must be met when transiting from a write cycle to a synchronous burst read.
PP
PP
setup to WE# high
hold from Status read
WLWH
WHWL
or t
or t
ELEH
WHWL
WLWH
EHEL
Parameter
) is defined from CE# or WE# low (whichever occurs last) to CE# or WE# high
) is defined from CE# or WE# high (whichever occurs first) to CE# or WE# low
= t
= t
EHEL
ELEH
= t
= t
WHEL
WLEH
= t
= t
EHWL
ELWH
).
.
t
AVQV
Min
150
200
200
50
50
50
20
19
19
0
0
0
0
0
0
0
0
7
-
-
+ 35
Max
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Order Number: 320002-10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1,2,3,6,10
1,2,3,6,10
1,2,3,6,8
1,2,3,11
1, 2, 12
1,2,3,7
1,2,3,7
Notes
1,2,3
1,2,3
1,2,4
1,2,5
1,2,9
Mar 2010
1,2

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