RC28F256P30TFB Micron Technology Inc, RC28F256P30TFB Datasheet - Page 93

no-image

RC28F256P30TFB

Manufacturer Part Number
RC28F256P30TFB
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of RC28F256P30TFB

Cell Type
NOR
Density
256Mb
Access Time (max)
100ns
Interface Type
Parallel/Serial
Boot Type
Top
Address Bus
24b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
EZBGA
Sync/async
Async/Sync
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
2V
Word Size
16b
Number Of Words
16M
Supply Current
31mA
Mounting
Surface Mount
Pin Count
64
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RC28F256P30TFB
Quantity:
4 694
P30-65nm
Appendix C Revision History
Datasheet
93
Revision Date
Mar 2010
Aug 2009
Dec 2008
Nov 2008
Nov 2008
Sep 2008
July 2008
Apr 2009
Jan 2008
Revision
10
09
08
07
06
05
04
03
02
Program performance update in front page,
Specifications”
t
page 59
Erase/program suspend latency specification update,
Erase Specifications” on page 63
Leaded TSOP part EOL.
Burst latency update and 40MHz spec update,
Support” on page 42
Clarify the capacitance,
Ordering Information update.
QUAD+ ball height correction to 0.2mm in
Update the Block lock Operations, Program Suspend/Resume, Erase Suspend/Resume
flowcharts in
Align the sequence error description in
Add TSOP 40MHz Burst Spec in
Add note 7 in buffer program flowchart
Update V
Update CFI 0x2A data in
Add 512 Mbit (256/256) memory map in
on page 7
Update QUAD+ signal description by changing A25 into RFU in
SCSP Ballout and Signals” on page 15
Correct RCR.4, RCR.5, RCR.7 and RCR.9 definitions in
Configuration Register Description” on page 39
Correct A
“Example of CFI Structure Output of x16 Devices” on page 67
Update QUAD+ package ballout H8 from OE# to F2-OE#. See
SCSP Ballout and Signals” on page 15
Update QUAD+ Signal Description A[MAX:1] to A[MAX:0] and its Name and Function.
See
Update Virtual Chip Enable Description from Address 25 to the maximum address bit.
See
Update TSOP Pinout P13 from VCC to RFU. See
Pinout (256-Mbit)” on page 13
Complete
Minor wording modifications.
Correct page buffer address bit to Four on
Mode Read”
Correct VHH to V
note 7.
Remove 128M related contents;
Return to StrataFlash trademark;
Update the buffer program for cross 512-Word boundary;
Correct A24 to A25 for virtual CE description in section 1.3;
Remove Numonyx Confidential.
Update Buffer program flowchart same as 130nm;
Minor wording modifications.
Update new trademark Axcell;
Remove 64M related contents.
Add W28 AC specification;
Fix Buffered Program Command error in figure 38;
Update block locking state diagram;
Update Address range in Memory Map figure;
Change LSB Address in ballout and pinout description from A0 back to A1 to match P30
130nm.
DVWH
Figure 6, “QUAD+ SCSP Signal Descriptions” on page 17
Section 1.3, “Virtual Chip Enable Description” on page 6
specification comments,
IL
0
Section 9.2, “Blank Check” on page 33
.
to A
undershoot and overshoot of Note 2 in
Figure 41
1
.
signal naming and remove invalid x8 information in
PPH
and CFI.
on
Table 23, “DC Current Characteristics” on page 51
Table 26, “Capacitance” on page 54
Table 37, “Device Geometry Definition”
,
.
Figure 36
Table 28, “AC Write Specifications” on
Table 27, “AC Read Specifications”
Description
,
Table 14
.
Figure 37
Figure 40
Figure 1, “P30-65nm Memory Map”
.
Section 7.1, “Asynchronous Page-
Figure 4
Section 29, “Program and Erase
Table 16, “LC and Frequency
Section 6, “56-Lead TSOP
.
.
.
Table 24
.
, backward compatible with 130nm.
Table 29, “Program and
.
Table 15, “Read
.
.
.
Order Number: 320002-10
Figure 8, “QUAD+
Figure 8, “QUAD+
Table 33,
.
.
.
.
.
.
Mar 2010

Related parts for RC28F256P30TFB