RC28F256P30TFB Micron Technology Inc, RC28F256P30TFB Datasheet - Page 52

• Manufacturer Part Number: RC28F256P30TFB
• Manufacturer: Micron Technology Inc

Specifications of RC28F256P30TFB

• Cell Type: NOR
• Density: 256Mb
• Access Time (max): 100ns
• Interface Type: Parallel/Serial
• Boot Type: Top
• Address Bus: 24b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 16b
• Number Of Words: 16M
• Supply Current: 31mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / Rohs Status: Not Compliant

Table 23: DC Current Characteristics (Sheet 2 of 2)
14.2
Table 24: DC Voltage Characteristics
Datasheet
52
Notes:
1.
2.
3.
4.
5.
6.
7.
Notes:
1.
2.
3.
V
V
I
Sym
Sym
V
V
V
V
V
PPBC
V
LKOQ
V
PPLK
LKO
PPH
PPL
OH
OL
IH
IL
All currents are RMS unless noted. Typical values at typical V
I
Sampled, not 100% tested.
I
I
Characteristics” on page 63
if V
the I
Synchronous read mode is not supported with TTL inputs.
V
less.
V
V
V
(Logic Level)
Buffered Enhanced
Factory Programming
V
CCS
CCES
CCW
V
IL
PP
Output High Voltage
Output Low Voltage
PP
PP
PP
Input High Voltage
Input Low Voltage
PP
V
V
IN
can undershoot to –1.0 V for duration of 2ns or less and V
CCQ
≤ V
, I
Blank Check
Voltage Supply
CC
PPS,
is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.
Lock-Out Voltage
Parameter
is specified with the device deselected. If device is read while in erase suspend, current is I
> V
CCE
PPLK
Lock Voltage
Lock Voltage
I
DC Voltage Characteristics
PPWS,
CC
measured over typical or max times specified in
inhibits erase and program operations. Do not use V
Parameter
the input load current increases to 10uA max.
I
PPES
Will increase to 200uA when Vpp/WP# is at V
V
V
(V
CCQ
CCQ
CCQ
-0.5
Min
1.0
0.9
1.5
8.5
-
-
CMOS Inputs
– 0.4
– 0.2
= 1.7 V – 3.6 V)
.
1.7V - 3.6 V)
0.05
0.05
Typ
(V
V
Inputs
CMOS
CCQ
CCQ
Max
0.4
0.2
0.4
3.6
9.5
-
-
-
+ 0.5
0.10
0.10
Max
=
0.05
0.05
TTL Inputs
V
Typ
(V
2.4 V - 3.6
CCQ
(V
CCQ
-0.5
Min
Section 16.0, “Program and Erase
2.0
1.0
0.9
1.5
8.5
CCQ
TTL Inputs
V)
-
-
– 0.2
CC
IH
= 2.4 V – 3.6 V)
0.10
0.10
, T
Max
=
PPL
can overshoot to V
PPH.
C
= +25 °C.
and V
V
CCQ
Unit
mA
(1)
Max
0.2
PPH
0.6
0.4
3.6
9.5
-
-
-
+ 0.5
outside their valid ranges
V
V
PP
PP
= V
= V
CCQ
Unit
V
V
V
V
V
V
V
V
V
Test Conditions
PPL,
PPH,
+ 1.0 V for durations of 2ns or
erase in progress
erase in progress
Test Conditions
V
V
I
V
CCQ
V
CCQ
I
Order Number: 320002-10
OH
OL
CC
CC
CCES
= –100 µA
= 100 µA
= V
= V
= V
= V
CC
CCQ
CC
CCQ
plus I
.
Min
Min
Min
Min
CCR
P30-65nm
.
Mar 2010
Notes
Notes
3
2
3
-
-
-
-