RC28F256P30TFB Micron Technology Inc, RC28F256P30TFB Datasheet - Page 65

• Manufacturer Part Number: RC28F256P30TFB
• Manufacturer: Micron Technology Inc

Specifications of RC28F256P30TFB

• Cell Type: NOR
• Density: 256Mb
• Access Time (max): 100ns
• Interface Type: Parallel/Serial
• Boot Type: Top
• Address Bus: 24b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 16b
• Number Of Words: 16M
• Supply Current: 31mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / Rohs Status: Not Compliant

P30-65nm
17.2
Figure 33: Decoder for SCSP P30-65nm
Note:
Table 31: Valid Combinations for Dual-Die Products
Note:
Datasheet
65
Package Designator
Product Designator
Device Density
Product Family
RD = Numonyx™ SCSP, leaded
PF = Numonyx™ SCSP, lead - free
RC = 64- Ball Easy BGA , leaded
PC = 64- Ball Easy BGA, lead - free
48F = Numonyx™ Flash Memory Only
P = Numonyx
0 = No die
4 = 256-Mbit
0 = No die
The last digit is randomly assigned to cover packing media and/or features or other specific configuration
The “B” parameter is used for Top(Die1)/Bot(Die2) stack option in the 512-Mbit density.
PF48F4000P0ZBQE*
PF48F4000P0ZTQE*
®
256-Mbit
Axcell
SCSP Products
TM
Flash Memory (P30)
P
F 4
8
F 4 4
RD48F4400P0VBQE*
RC48F4400P0VB0E*
PF48F4400P0VBQE*
PC48F4400P0VB0E*
0
512-Mbit
0
P 0
*
V
B 0
E
*
Ballout Descriptor
I/ O Voltage, CE # Configuration
Device Features*
Device Details
Parameter Location
V
V
E = 65 nm lithography
0 = Discrete ballout
B = Bottom Parameter
T = Top Parameter
Z = Individual Chip Enable(s)
V = Virtual Chip Enable(s)
Q = QUAD+ ballout
CC
CCQ
= 1. 7 to 2. 0 V
= 1. 7 to 3. 6 V
Order Number: 320002-10
.
Mar 2010