RC28F256P30TFB Micron Technology Inc, RC28F256P30TFB Datasheet - Page 92

• Manufacturer Part Number: RC28F256P30TFB
• Manufacturer: Micron Technology Inc

Specifications of RC28F256P30TFB

• Cell Type: NOR
• Density: 256Mb
• Access Time (max): 100ns
• Interface Type: Parallel/Serial
• Boot Type: Top
• Address Bus: 24b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 16b
• Number Of Words: 16M
• Supply Current: 31mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / Rohs Status: Not Compliant

B.3
Datasheet
92
Block :
Main block :
Parameter block :
Top parameter device :
Bottom parameter device :
Nomenclature
A group of bits, bytes, or words within the flash memory array that erase
simultaneously. The P30-65nm has two block sizes: 32 KByte and 128 KByte.
An array block that is usually used to store code and/or data. Main blocks are larger
than parameter blocks.
An array block that may be used to store frequently changing data or small system
parameters that traditionally would be stored in EEPROM.
A device with its parameter blocks located at the highest physical address of its
memory map.
A device with its parameter blocks located at the lowest physical address of its
memory map.
Order Number: 320002-10
P30-65nm
Mar 2010