MC9S12C128VFU Freescale Semiconductor, MC9S12C128VFU Datasheet - Page 537

• Manufacturer Part Number: MC9S12C128VFU
• Manufacturer: Freescale Semiconductor

Specifications of MC9S12C128VFU

• Cpu Family: HCS12
• Device Core Size: 16b
• Frequency (max): 25MHz
• Interface Type: CAN/SCI/SPI
• Program Memory Type: Flash
• Program Memory Size: 128KB
• Total Internal Ram Size: 4KB
• # I/os (max): 60
• Number Of Timers - General Purpose: 8
• Operating Supply Voltage (typ): 2.5/5V
• Operating Supply Voltage (max): 2.75/5.5V
• Operating Supply Voltage (min): 2.35/2.97V
• On-chip Adc: 8-chx10-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 105C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 80
• Package Type: PQFP
• Lead Free Status / Rohs Status: Not Compliant

Chapter 19
64 Kbyte Flash Module (S12FTS64KV4)
19.1
The
memory contains one array of
sector size of eight rows
misaligned words. Read access time is one bus cycle for byte and aligned word, and two bus cycles for
misaligned words.
The Flash array is ideal for program and data storage for single-supply applications allowing for field
reprogramming without requiring external voltage sources for program or erase. Program and erase
functions are controlled by a command driven interface. The Flash module supports both mass erase and
sector erase. An erased bit reads 1 and a programmed bit reads 0. The high voltage required to program
and erase is generated internally. It is not possible to read from a Flash array while it is being erased or
programmed.
19.1.1
Command Write Sequence — A three-step MCU instruction sequence to program, erase, or erase verify
the Flash array memory.
19.1.2
Freescale Semiconductor
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FTS128K1FTS64K
12864
10241024
Automated program and erase algorithm
Interrupts on Flash command completion and command buffer empty
Fast sector erase and word program operation
2-stage command pipeline for faster multi-word program times
Flexible protection scheme to prevent accidental program or erase
Single power supply for Flash program and erase operations
Security feature to prevent unauthorized access to the Flash array memory
Introduction
Glossary
Features
Kbytes of Flash memory comprised of one
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
bytes
(10241024
module implements a
12864
bytes). The Flash array may be read as either bytes, aligned words, or
MC9S12C-Family / MC9S12GC-Family
Kbytes organized as
CAUTION
12864
Rev 01.24
Kbyte Flash (nonvolatile) memory. The Flash
12864
1024512
Kbyte array divided into
rows of
128128
bytes with an erase
12864
sectors of
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