ST7DALIF2 STMicroelectronics, ST7DALIF2 Datasheet - Page 129

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ST7DALIF2

Manufacturer Part Number
ST7DALIF2
Description
8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST7DALIF2

8 Kbytes Single Voltage Flash Program Memory With Read-out Protection, In-circuit Programming And In-application Programming (icp And Iap). 10k Write/erase Cycles Guaranteed, Data Retention
20 years at 55°C.
256 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention
20 years at 55°C.
Clock Sources
Internal 1% RC oscillator, crystal/ceramic resonator or external clock
Five Power Saving Modes
Halt, Active-Halt, Wait and Slow, Auto Wake Up From Halt
ST7DALIF2
Table 63.
1.
2.
3.
4.
Table 64.
I
respected, the injection current must be limited externally to the I
while a negative injection is induced by V
corresponding V
Negative injection disturbs the analog performance of the device. In particular, it induces leakage currents throughout the
device including the analog inputs. To avoid undesirable effects on the analog functions, care must be taken:
- Analog input pins must have a negative injection less than 0.8 mA (assuming that the impedance of the analog voltage is
lower than the specified limits)
- Pure digital pins must have a negative injection less than 1.6mA. In addition, it is recommended to inject the current as
far as possible from the analog input pins.
No negative current injection allowed on PB0 and PB1 pins.
When several inputs are submitted to a current injection, the maximum ΣI
negative injected currents (instantaneous values). These results are based on characterization with ΣI
current injection on four I/O port pins of the device.
INJ(PIN)
I
INJ(PIN)
ΣI
Symbol
Symbol
INJ(PIN)
T
I
I
VDD
VSS
I
STG
T
IO
must never be exceeded. This is implicitly insured if V
J
(1) & (2)
Current characteristics
Thermal characteristics
2)
IN
maximum must always be respected
Total current into V
Total current out of V
Output current sunk by any standard I/O and
control pin
Output current sunk by any high sink I/O pin
Output current source by any I/Os and control
pin
Injected current on RESET pin
Injected current on OSC1 and OSC2 pins
Injected current on PB0 and PB1 pins
Injected current on any other pin
Total injected current (sum of all I/O and control
pins)
Storage temperature range
Maximum junction temperature (see
(4)
IN
<V
SS
DD
Ratings
. For true open-drain pads, there is no positive injection current, and the
Ratings
SS
power lines (source)
ground lines (sink)
IN
INJ(PIN)
maximum is respected. If V
(4)
Table 94 on page
value. A positive injection is induced by V
(3)
INJ(PIN)
is the absolute sum of the positive and
Maximum value
Electrical characteristics
-65 to +150
IN
160)
maximum cannot be
Value
± 20
150
- 25
± 5
± 5
± 5
75
20
40
+5
INJ(PIN)
maximum
IN
>V
129/171
Unit
Unit
mA
°C
DD

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